| 臺大學術典藏 |
2018-09-10T06:30:13Z |
Growth of ferroelectric crystal fibers for wavelength conversion
|
Lee, L.M.; Pei, S.C.; Tai, T.M.; Sun, D.H.; Kung, A.H.; Huang, S.L.; SHENG-LUNG HUANG |
| 大葉大學 |
2000-10 |
Growth of ferromagnetic Nd0.7Sr0.3MnO3 films with an off-axis sputtering configuration
|
Sung, H. H.;Su, B. T.;Yang, H. C.;Horng, H. E.;Wang, Li-Min |
| 國立臺灣大學 |
2000 |
Growth of ferromagnetic Nd0.7Sr0.3MnO3 films with an off-axis sputtering configuration
|
Wang, L. M.; Sung, H. H.; Su, B. T.; Yang, H. C.; Horng, H. E. |
| 國立交通大學 |
2019-04-02T05:58:47Z |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
|
Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
|
李清庭; Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Chang, Edward Yi |
| 國立成功大學 |
2006-02-24 |
Growth of free-standing diamond films of hemispheric shells
|
Huang, Shr-Ming; Hong, Franklin Chau-Nan |
| 國立交通大學 |
2014-12-08T15:09:46Z |
Growth of free-standing GaN layer on Si(111) substrate
|
Yang, Tsung Hsi; Ku, Jui Tai; Chang, Jet-Rung; Shen, Shih-Guo; Chen, Yi-Cheng; Wong, Yuen Yee; Chou, Wu Ching; Chen, Chien-Ying; Chang, Chun-Yen |
| 臺大學術典藏 |
1997 |
Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
|
Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG |
| 國立成功大學 |
2011-09 |
Growth of Ga(2)O(3) Nanowires and the Fabrication of Solar-Blind Photodetector
|
Weng, W. Y.; Hsueh, T. J.; Chang, Shoou-Jinn; Huang, G. J.; Hung, S. C. |
| 實踐大學 |
2011 |
Growth of Ga2O3 Nanowires and the Fabrication of Solar-Blind Photodetector
|
Weng, W.Y.;Hsueh, T.J.;Chang, S.J.;Huang, G.J.;Hung, S.C. |
| 國立成功大學 |
2011-09 |
Growth of Ga2O3 nanowires and the fabrication of solar-blind photodetector
|
Weng, W.-Y.;Hsueh, T.-J.;Chang, Shoou-Jinn;Huang, G.-J.;Humg, S.-C. |
| 國立中山大學 |
1998 |
Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs
|
M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen |
| 國立交通大學 |
2014-12-16T06:16:17Z |
Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer
|
Chang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen |
| 國立交通大學 |
2014-12-16T06:14:31Z |
Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer
|
Chang; Edward Y.; Luo; Guangli; Yang; Tsung Hsi; Chung Yen |
| 國立交通大學 |
2014-12-16T06:16:05Z |
Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layer
|
Chang, Edward Y.; Luo, Guangli; Yang, Tsung-Hsi; Chang, Chun-Yen |
| 中原大學 |
1993 |
Growth of GaAs on Si by employing AlAs/GaAs Double Amorphous Buffer
|
W.Y.Uen;T.Nishinaga |
| 國立成功大學 |
2008 |
Growth of GaAs oxide layer using photoelectrochemical method
|
Lee, Hsin-Ying |
| 國立成功大學 |
2012-01-15 |
Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer
|
Liu, Kuang-Wei; Young, Sheng-Joue; Chang, Shoou-Jinn; Hsueh, Tao-Hung; Hung, Hung; Chen, Shi-Xiang; Chen, Yue-Zhang |
| 中原大學 |
2006-11 |
Growth of Gamma-In2Se3 Films on Si Substrates by Metal-Organic Chemical Vapor Deposition with AlN Buffer Layer
|
謝志傑;溫武義;李鎮宇;籃山明 ;Xie, Zhi-Jay;Uen, Wu-Yih;Li, Zhen-Yu;Lan, Shan-Ming |
| 國立交通大學 |
2014-12-08T15:43:58Z |
Growth of gamma-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures
|
Huang, Yen-Chin; Li, Zhen-Yu; Uen, Wu-Yih; Lan, Shan-Ming; Chang, K. J.; Xie, Zhi-Jay; Chang, J. Y.; Wang, Shing-Chung; Shen, Ji-Lin |
| 中原大學 |
2006-12 |
Growth of Gamma-In2Se3 Films on Si Substrates by Metal-Organic Chemical VaporDeposition with AlN Buffer Layer
|
謝志傑;溫武義;李鎮宇;籃山明 ;Xie, Zhi-Jay;Uen, Wu-Yih;Li, Zhen-Yu;Lan, Shan-Ming |
| 國立交通大學 |
2014-12-08T15:13:06Z |
Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method
|
Lin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; Lee, Ching-Ting |
| 國立成功大學 |
2007-11-26 |
Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method
|
Lin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; Lee, Ching-Ting |
| 國立交通大學 |
2014-12-08T15:36:28Z |
Growth of GaN films on circle array patterned Si (111) substrates
|
Lin, Kung-Liang; Binh Tinh Tran; Chung, Chen-Chen; Chang, Edward-Yi |
| 國立交通大學 |
2016-03-28T00:04:14Z |
Growth of GaN on Patterned Sapphire Substrate with High-Index Facets
|
Chang, Sheng-Chieh; Chen, Chien-Chih; Chang, Tsu-Chi; Lin, Kun-Lin; Lu, Tien-Chang; Chang, Li; Wu, YewChung Sermon |
| 國立交通大學 |
2018-08-21T05:54:29Z |
Growth of GaN on {12(3)over-bar5}-like Facets of Patterned Sapphire Substrate
|
Wu, Pei-Yu; Chen, Chien-Chih; Huang, Chia-Yen; Kuo, Hao-Chung; Lin, Kun-Lin; Wu, YewChung Sermon |
| 元智大學 |
2017-09-06 |
Growth of GaN Thin Film on Amorphous Glass Substrate by DC-Pulse Sputtering Deposition Technique
|
Wei-Sheng Liu; Yu-Lin Chang |
| 元智大學 |
Jul-19 |
Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique
|
Wei-Sheng Liu; Yu-Lin Chang; Hui-Yu Chen |
| 大葉大學 |
2011-12-08 |
Growth of germanium nanowires using gold as catalyst
|
Lee, Shih-Fong;Lee, Li-Ying;Chang, Yung-Ping;Huang, Chun-Jung |
| 臺大學術典藏 |
2018-09-10T14:57:33Z |
Growth of Glass-clad Cr4+:YSO crystal fiber for white light interferometry
|
Yang, Teng-I;Ho, Tuan-Shu;Jheng, Dong-Yo;Wang, Shih-Chang;Hsu, Kuang-Yu;Huang, Sheng-Lung; Yang, Teng-I; Ho, Tuan-Shu; Jheng, Dong-Yo; Wang, Shih-Chang; Hsu, Kuang-Yu; Huang, Sheng-Lung; Huang, Sheng-Lung |
| 國立交通大學 |
2014-12-08T15:29:38Z |
Growth of gold nanowires on flexible substrate for highly sensitive biosensing: detection of thrombin as an example
|
Chen, Yu-Liang; Lee, Chi-Young; Chiu, Hsin-Tien |
| 元智大學 |
2011-09-19 |
Growth of graphene thin-films by polymer precursor-based chemical vapor deposition under atmospheric pressure
|
G.N. Shi; N.W. Pu; Y.M. Liu; N.T. Wen; Y. Sung; M.D. Ger |
| 國立臺灣科技大學 |
2004 |
Growth of High Conformal Cu Thin Films by Two-Step MOCVD
|
李欣浤;郭俞麟;李嘉平 |
| 國立成功大學 |
2012-06 |
Growth of high performance single grain Y-Ba-Cu-O Bulk superconductor with sol-gel derived Y2Ba4CuAgO addition
|
Chen, In-Gann; Chen, Po-Wei; Chen, Shih-Yun; Wu, Maw-Kuen; Liu, Chien-ju |
| 淡江大學 |
2005-05 |
Growth of high quality AlN on diamond using Ti buffer layer
|
林諭男 |
| 淡江大學 |
2006-02 |
Growth of high quality AlN thin films on diamond using TiN/Ti buffer layer
|
林諭男; Lin, I-nan |
| 臺大學術典藏 |
2018-09-10T06:56:07Z |
GROWTH OF HIGH TC-SUPERCONDUCTING Y-BA-CU-O THIN-FILMS BY A CHEMICAL SPRAY PYROLYSIS METHOD
|
Chu, J. J.;Liu, R. S.;Wu, P. T.;Chen, L. J.; Chu, J. J.; Liu, R. S.; Wu, P. T.; Chen, L. J.; RU-SHI LIU |
| 國立交通大學 |
2014-12-08T15:11:22Z |
Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions
|
Huang, Ting-Kai; Chen, Ying-Chieh; Ko, Hsin-Chun; Huang, Hsin-Wei; Wang, Chia-Hsin; Lin, Huang-Kai; Chen, Fu-Rong; Kai, Ji-Jung; Lee, Chi-Young; Chiu, Hsin-Tien |
| 元智大學 |
2009-01 |
Growth of high-density InN nanodots by pulsed MOVPE
|
柯文政; 林文仁; 李大青; 林家慶 |
| 國立臺灣海洋大學 |
2002-03-15 |
Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
|
Fu-Hsiang Yang;Jih-Sheng Hwang;Ying-Jay Yang;Kuei-Hsien Chen;Jih-Hsiang Wang |
| 國立臺灣大學 |
2002 |
Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
|
Yang, Fu-Hsiang; Hwang, Jih-Sheng; Yang, Ying-Jay; Chen, Kuei-Hsien; Wang, Jih-Hsiang |
| 國立交通大學 |
2014-12-08T15:33:45Z |
Growth of high-quality epitaxial ZnO films on (10-10) sapphire by atomic layer deposition with flow-rate interruption method
|
Huang, Jheng-Ming; Ku, Ching-Shun; Lee, Hsin-Yi; Lin, Chih-Ming; Chen, San-Yuan |
| 國立交通大學 |
2014-12-08T15:25:54Z |
Growth of high-quality GaAs epitaxial layers on Si substrite by using a novel GeSi buffer strucuture
|
Chang, EY; Luo, GL; Yang, TH |
| 國立交通大學 |
2014-12-08T15:40:52Z |
Growth of high-quality Ge epitaxial layers on Si(100)
|
Luo, GL; Yang, TH; Chang, EY; Chang, CY; Chao, KA |
| 國立交通大學 |
2014-12-08T15:21:13Z |
Growth of High-Quality In(0.4)Ga(0.6)N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
|
Binh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh |
| 國立交通大學 |
2018-08-21T05:54:15Z |
Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications
|
Huynh, Sa Hoang; Ha, Minh Thien Huu; Do, Huy Binh; Nguyen, Tuan Anh; Yu, Hung Wei; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:57:55Z |
Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
|
Binh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh |
| 國立臺灣大學 |
2006 |
Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs
|
Chen, P. S.; Lee, S. W.; Lee, M. H.; Liu, C. W. |
| 臺大學術典藏 |
2018-09-10T04:31:01Z |
Growth of high-Tc YBa2Cu3Oy films with an off-axis sputtering configuration
|
Wang, L.M.;Sung, H.H.;Chern, J.H.;Yang, H.C.;Horng, H.E.; Wang, L.M.; Sung, H.H.; Chern, J.H.; Yang, H.C.; Horng, H.E.; LI-MIN WANG |
| 國立交通大學 |
2019-04-02T06:01:00Z |
Growth of Highly (111)-Oriented Nanotwinned Cu with the Addition of Sulfuric Acid in CuSO4 Based Electrolyte
|
Tseng, Chih-Han; Chen, Chih |
