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Institution Date Title Author
實踐大學 2011 Growth of Ga2O3 Nanowires and the Fabrication of Solar-Blind Photodetector Weng, W.Y.;Hsueh, T.J.;Chang, S.J.;Huang, G.J.;Hung, S.C.
國立成功大學 2011-09 Growth of Ga2O3 nanowires and the fabrication of solar-blind photodetector Weng, W.-Y.;Hsueh, T.-J.;Chang, Shoou-Jinn;Huang, G.-J.;Humg, S.-C.
國立中山大學 1998 Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen
國立交通大學 2014-12-16T06:16:17Z Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer Chang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen
國立交通大學 2014-12-16T06:14:31Z Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer Chang; Edward Y.; Luo; Guangli; Yang; Tsung Hsi; Chung Yen
國立交通大學 2014-12-16T06:16:05Z Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layer Chang, Edward Y.; Luo, Guangli; Yang, Tsung-Hsi; Chang, Chun-Yen
中原大學 1993 Growth of GaAs on Si by employing AlAs/GaAs Double Amorphous Buffer W.Y.Uen;T.Nishinaga
國立成功大學 2008 Growth of GaAs oxide layer using photoelectrochemical method Lee, Hsin-Ying
國立成功大學 2012-01-15 Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer Liu, Kuang-Wei; Young, Sheng-Joue; Chang, Shoou-Jinn; Hsueh, Tao-Hung; Hung, Hung; Chen, Shi-Xiang; Chen, Yue-Zhang
中原大學 2006-11 Growth of Gamma-In2Se3 Films on Si Substrates by Metal-Organic Chemical Vapor Deposition with AlN Buffer Layer 謝志傑;溫武義;李鎮宇;籃山明 ;Xie, Zhi-Jay;Uen, Wu-Yih;Li, Zhen-Yu;Lan, Shan-Ming

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