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Institution Date Title Author
國立臺灣大學 2006 Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates Wu, Kun-Ta; Chang, P.H.; Lien, S.T.; Chen, N.C.; Chang, Ching-An; Shih, C.F.; Lien, W.C.; Wu, Y.H.; Chen, Shang-Chia; Chang, Y.H.; Liang, C.-T.
國立交通大學 2014-12-08T15:10:40Z Growth and characterization of Ge nanostructures selectively grown on patterned Si Cheng, M. H.; Ni, W. X.; Luo, G. L.; Huang, S. C.; Chang, J. J.; Lee, C. Y.
國立交通大學 2018-08-21T05:53:47Z Growth and characterization of high quality CIGS films using novel precursors stacked and surface sulfurization process Wu, Cheng-Han; Wu, Pu-Wei; Hsiao, Ruey-Chang; Hsu, Chun-Yao
國立交通大學 2018-08-21T05:52:47Z Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application Hsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi
臺大學術典藏 2000-05 Growth and characterization of InAsN alloys Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru
國立臺灣大學 2000-05 Growth and characterization of InAsN alloys Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru
臺大學術典藏 2018-09-10T07:41:14Z Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
國立成功大學 2000 Growth and characterization of InGaN/GaN multi-quantum well light-emitting diodes �Sheu, �Jinn-Kong; Su, Yan-Kuin; Chi, G. C.; Jou, M. J.
淡江大學 2008-05-13 Growth and characterization of InN thin film by metal-organic vcapor phase epitaxy (MOVPE) on different buffers Chang, P. H.; Wei, Y. Y.; Chen, C. W.; Reng, H. C.; Ling, D. C.; Chen, N. C.; Chang, C. A.
國立中山大學 1988 Growth and Characterization of InP Epilayers on ZnSe-coated Si Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition M.K. Lee; D.S. Wuu; H.H. Tung; J.H. Chang; Y.F. Lin

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