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Institution	Date	Title	Author
國立交通大學	2018-08-21T05:52:47Z	Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application	Hsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi
臺大學術典藏	2000-05	Growth and characterization of InAsN alloys	Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru
國立臺灣大學	2000-05	Growth and characterization of InAsN alloys	Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru
臺大學術典藏	2018-09-10T07:41:14Z	Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy	J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
國立成功大學	2000	Growth and characterization of InGaN/GaN multi-quantum well light-emitting diodes	�Sheu, �Jinn-Kong; Su, Yan-Kuin; Chi, G. C.; Jou, M. J.
淡江大學	2008-05-13	Growth and characterization of InN thin film by metal-organic vcapor phase epitaxy (MOVPE) on different buffers	Chang, P. H.; Wei, Y. Y.; Chen, C. W.; Reng, H. C.; Ling, D. C.; Chen, N. C.; Chang, C. A.
國立中山大學	1988	Growth and Characterization of InP Epilayers on ZnSe-coated Si Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition	M.K. Lee; D.S. Wuu; H.H. Tung; J.H. Chang; Y.F. Lin
國立中山大學	1988	Growth and Characterization of InP/GaAs Epilayers on Si Substrates by Low-pressure Metalorganic Chemical Vapor Phase Epitaxy	M.K. Lee; D.S. Wuu; H.H. Jung; K.Y. Yu; K.C. Huang
國立臺灣海洋大學	2005	Growth and characterization of Iridium Dioxide Nanorods	Chen;R. S.;Y. S. Huang;Y. M. Liang;D. S. Tsai;K. K. Tiong
國立臺灣海洋大學	2004-11-30	Growth and characterization of Iridium Dioxide Nanorods	R.S. Chen;Y.S. Huang;Y.M. Liang;D.S. Tsai;K.K. Tiong

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