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Institution	Date	Title	Author
臺大學術典藏	2001	Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy	Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru
南台科技大學	1997	Growth of InAsP Compound Semiconductor by Metal Organic Chemical Vapor Deposition	管鴻; W.T. Hrong; H. Kuan
臺大學術典藏	2018-09-10T04:35:09Z	Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy	G. Tsai; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN
國立臺灣大學	2005-05	Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy	Tsai, Gene; Lin, Hao-Hsiung
國立臺灣大學	2004	Growth of InGaAs-capped InAs Quantum Dots Characterized by Atomic Force Microscope and Scanning Electron Microscope	Chen, Shen-de; Tsai, Chiou-yun; Lee, Si-chen
國立成功大學	2004-05	Growth of InGaN self-assembled quantum dots and their application to photodiodes	Ji, L. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Tsai, S. I.; Hung, S. C.; Chuang, R. W.; Fang, T. H.; Tsai, T. Y.
國立成功大學	2013-07	Growth of InN Nanorods on Glass Substrates by Molecular Beam Heteroepitaxy	Lee, Kai-Hsuan; Chang, Sheng-Po; Lu, Kuang-Wei; Chang, Ping-Chuan; Chang, Shoou-Jinn; Chen, Tse-Pu; Shiu, Hung-Wei; Chang, Lo-Yueh; Chen, Chia-Hao
國立成功大學	2012-05-15	Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses	Liu, K. W.; Young, S. J.; Chang, S. J.; Hsueh, T. H.; Chen, Y. Z.; Chen, K. J.; Hung, H.; Wang, S. M.; Wu, Y. L.
國立交通大學	2014-12-08T15:11:16Z	Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN/AlN double-buffer layers	Li, Zhen-Yu; Lan, Shan-Ming; Uen, Wu-Yih; Chen, Ying-Ru; Chen, Meng-Chu; Huang, Yu-Hsiang; Ku, Chien-Te; Liao, Sen-Mao; Yang, Tsun-Neng; Wang, Shing-Chung; Chi, Gou-Chung
臺大學術典藏	2018-09-10T05:26:32Z	Growth of InPSb on InAs inside a miscibility gap using gas source MBE	G. Tsai; H. H. Lin; HAO-HSIUNG LIN

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