| 東方設計學院 |
2010-11-18 |
Growth of Semi-polar (1013) AIN Films on the Silicon
|
Jhong, Shih-Bin; Wu, Sean; Liu, Kuan-Ting; Lin, Zhi-Xun; Lai, Yi-Shao; Yang, Ping-Feng; 吳信賢; (東方設計學院電子與資訊系) |
| 國立交通大學 |
2014-12-08T15:21:04Z |
Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate
|
Chiu, Ching-Hsueh; Lin, Da-Wei; Li, Zhen-Yu; Ling, Shih-Chun; Kuo, Hao-Chung; Lu, Tien-Chang; Wang, Shing-Chung; Liao, Wei-Tasi; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Sawaki, Nobuhiko |
| 元智大學 |
2010-09 |
Growth of semipolar InN (10-13) on LaAlO3 (112) substrate
|
Wei-Chun Chen; Shou-Yi Kuo; Woei-Tyng Lin; Jr.-Sheng Tian; Fang-I Lai; Chien-Nan Hsiao; Li Chang |
| 國立交通大學 |
2014-12-08T15:11:47Z |
Growth of Semipolar InN(10(1)over-bar3) on LaAlO(3)(112) Substrate
|
Chen, Wei-Chun; Tian, Jr-Sheng; Wang, Wei-Lin; Ho, Yen-Teng; Chang, Li |
| 國立交通大學 |
2019-04-02T05:58:39Z |
Growth of Semipolar InN(10(1)over-bar3) on LaAlO3(112) Substrate
|
Chen, Wei-Chun; Tian, Jr-Sheng; Wang, Wei-Lin; Ho, Yen-Teng; Chang, Li |
| 國立交通大學 |
2014-12-08T15:03:03Z |
Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2
|
Liu, CC; Lee, CP; Cheng, KL; Cheng, HC; Yew, TR |
| 臺大學術典藏 |
2022-08-09T03:51:02Z |
Growth of SiCN crystals consisting of a predominantly carbon nitride network
|
Bhusari D.M.; Chen C.K.; Chen K.H.; Chen L.C.; Chuang T.J.; Bhusari D.M.; Chen C.K.; Chen K.H.; Chen L.C.; Chuang T.J.; LI-CHYONG CHEN |
| 國立成功大學 |
2003-11 |
Growth of single crystal ZnO nanowires using sputter deposition
|
Chiou, Wen-Ting; Wu, Wan-Yu; Ting, Jyh-Ming |
| 國立臺灣大學 |
2005-05 |
Growth of Single-crystal Wurtzite Aluminum Nitride Nanotips with Self-selective Apex Angle
|
Shi, SC; Chen, CF; Chattopadhyay, S; Lan, ZH; Chen, KH; Chen, LC |
| 國立成功大學 |
2013-07-03 |
Growth of single-crystalline cobalt silicide nanowires and their field emission property
|
Lu, Chi-Ming; Hsu, Han-Fu; Lu, Kuo-Chang |
| 國立交通大學 |
2014-12-08T15:20:48Z |
Growth of single-crystalline cobalt silicide nanowires with excellent physical properties
|
Liang, Yu-Hsin; Yu, Shih-Ying; Hsin, Cheng-Lun; Huang, Chun-Wei; Wu, Wen-Wei |
| 國立交通大學 |
2014-12-08T15:06:06Z |
GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHOD
|
CHENG, HC; WU, IC; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:05:05Z |
GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111)SI AT LOW ANNEALING TEMPERATURES BY A NONULTRAHIGH VACUUM METHOD
|
CHENG, HC; JUANG, MH |
| 國立成功大學 |
2015 |
Growth of single-crystalline nickel silicide nanowires with excellent physical properties
|
Lin, Jen-Yi; Hsu, Hsiu-Ming; Lu, Kuo-Chang |
| 國立交通大學 |
2014-12-08T15:14:58Z |
Growth of single-crystalline RuO2 nanowires with one- and two-nanocontact electrical characterizations
|
Liu, Yee-Lang; Wu, Zong-Yi; Lin, Kuei-Jiun; Huang, Jr-Jeng; Chen, Fu-Rong; Kai, Ji-Jung; Lin, Yong-Han; Jian, Wen-Bin; Lin, Juhn-Jong |
| 國立交通大學 |
2014-12-08T15:19:15Z |
Growth of single-crystalline wurtzite aluminum nitride nanotips with a self-selective apex angle
|
Shi, SC; Chen, CF; Chattopadhyay, S; Lan, ZH; Chen, KH; Chen, LC |
| 臺大學術典藏 |
2022-08-09T03:50:34Z |
Growth of single-crystalline wurtzite aluminum nitride nanotips with a self-selective apex angle
|
Shi S.-C.; Chen C.-F.; Chattopadhyay S.; Lan Z.-H.; Chen K.-H.; Chen L.-C.; Shi S.-C.; Chen C.-F.; Chattopadhyay S.; Lan Z.-H.; Chen K.-H.; Chen L.-C.; LI-CHYONG CHEN |
| 國立成功大學 |
2005-09 |
Growth of SiO2 nanowires without a catalyst via carbothermal reduction of CuO powders
|
Lin, Yu-Chiao; Lin, Wen-Tai |
| 淡江大學 |
2016-06 |
GROWTH OF SOLUTIONS OF SECOND ORDER LINEAR DIFFERENTIAL EQUATIONS WITH EXTREMAL FUNCTIONS FOR DENJOY'S CONJECTURE AS COEFFICIENTS
|
Long, Jianren |
| 國立交通大學 |
2014-12-08T15:24:25Z |
Growth of sparse arrays of narrow GaN nanorods hosting spectrally stable InGaN quantum disks
|
Chen, Yen-Ting; Tsai, Wen-Che; Chen, Wen-Yen; Hsiao, Ching-Lien; Hsu, Hsu-Cheng; Chang, Wen-Hao; Hsu, Tzu-Min; Chen, Kuei-Hsien; Chen, Li-Chyong |
| 國立臺灣大學 |
2005 |
Growth of strained Si on high-quality relaxed Si1?xGex with an intermediate Si1?yCy layer
|
Lee, S. W.; Chueh, Y. L.; Chen, L. J.; Chou, L. J.; Chen, P. S.; Lee, M. H.; Tsai, M.-J.; Liu, C. W. |
| 臺大學術典藏 |
2018-09-10T08:35:40Z |
Growth of structure i carbon dioxide hydrate from molecular dynamics simulations
|
Tung, Y.-T.; Chen, L.-J.; Chen, Y.-P.; Lin, S.-T.; SHIANG-TAI LIN; LI-JEN CHEN |
| 臺大學術典藏 |
2008-02 |
Growth of Tabular alpha-Al2O3 Grains on Porous Alumina Substrate
|
韋文誠; 韋文誠 |
| 國立臺灣大學 |
2008-02 |
Growth of Tabular alpha-Al2O3 Grains on Porous Alumina Substrate
|
韋文誠 |
| 臺大學術典藏 |
2020-05-12T02:54:18Z |
Growth of tabular α-Al2O3 grains on porous alumina substrate
|
Yu, B.-Y.; Wei, W.-C.J.; WEN-CHENG J. WEI |
