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Institution Date Title Author
國立交通大學 2019-04-02T05:58:47Z Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi
國立成功大學 2006-02-24 Growth of free-standing diamond films of hemispheric shells Huang, Shr-Ming; Hong, Franklin Chau-Nan
國立交通大學 2014-12-08T15:09:46Z Growth of free-standing GaN layer on Si(111) substrate Yang, Tsung Hsi; Ku, Jui Tai; Chang, Jet-Rung; Shen, Shih-Guo; Chen, Yi-Cheng; Wong, Yuen Yee; Chou, Wu Ching; Chen, Chien-Ying; Chang, Chun-Yen
臺大學術典藏 1997 Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG
國立成功大學 2011-09 Growth of Ga(2)O(3) Nanowires and the Fabrication of Solar-Blind Photodetector Weng, W. Y.; Hsueh, T. J.; Chang, Shoou-Jinn; Huang, G. J.; Hung, S. C.
實踐大學 2011 Growth of Ga2O3 Nanowires and the Fabrication of Solar-Blind Photodetector Weng, W.Y.;Hsueh, T.J.;Chang, S.J.;Huang, G.J.;Hung, S.C.
國立成功大學 2011-09 Growth of Ga2O3 nanowires and the fabrication of solar-blind photodetector Weng, W.-Y.;Hsueh, T.-J.;Chang, Shoou-Jinn;Huang, G.-J.;Humg, S.-C.
國立中山大學 1998 Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen
國立交通大學 2014-12-16T06:16:17Z Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer Chang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen
國立交通大學 2014-12-16T06:14:31Z Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer Chang; Edward Y.; Luo; Guangli; Yang; Tsung Hsi; Chung Yen

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