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Institution Date Title Author
國立成功大學 1999-05 High-level variability in the ORF-K1 membrane protein gene at the left end of the Kaposi's sarcoma-associated herpesvirus genome defines four major virus subtypes and multiple variants or clades in different human populations Zong, Jian-Chao; Ciufo, DoloresM.; Alcendor, DonaldJ.; Wan, Xiao-Yu; Nicholas, John; Browning, PhilipJ.; Rady, PeterL.; Tyring, StephenK.; Orenstein, JanM.; Rabkin, CharlesS.; Su, Ih-Jen; Powell, KevinF.
臺北醫學大學 2013 High-level?expression?of?CXCR4?in?breast cancer?is?associated?with?early?distant?and?bonemetastases CS, Hung;HY, Su;HH, Liang;CW, Lai;YC, Chang;YS, Ho;CH, Wu;JD, Ho;PL, Wei;YJ, Chang
臺北醫學大學 2013 High-level?expression?of?CXCR4?in?breast cancer?is?associated?with?early?distant?and?bonemetastases Hung, CS;Su, HY;Liang, HH;Lai, CW;Chang, YC;Ho, YS;Wu, CH;Ho, JD;Wei, PL;Chang, YJ
國立成功大學 2022 High-Li+-fraction ether-side-chain pyrrolidinium–asymmetric imide ionic liquid electrolyte for high-energy-density Si//Ni-rich layered oxide Li-ion batteries Umesh, B.;Rath, P.C.;Patra, J.;Hernandha, R.F.H.;Majumder, S.B.;Gao, X.;Bresser, D.;Passerini, S.;Lai, H.-Z.;Chang, T.-L.;Chang, J.-K.
國立交通大學 2014-12-08T15:16:39Z High-linear-power MESFET devices using source-degeneration inductance and input-impedance mismatch Meng, CC; Wang, W
國立高雄師範大學 2000 High-Linearity and Current-Enhancement Camel-Gate Field Effect Transistor Utilizing d-Doping Channels Jung-Hui Tsai; 蔡榮輝
國立臺灣大學 2005-06 High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control Hua, Wei-Chun; Lai, Hung-Hui; Lin, Po-Tsung; Liu, Chee Wee; Yang, Tzu-Yi; Ma, Gin-Kou
臺大學術典藏 2018-09-10T05:23:45Z High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control Hua, Wei-Chun; Lai, Hung-Hui; Lin, Po-Tsung; Liu, Chee Wee; Yang, Tzu-Yi; Ma, Gin-Kou; CHEE-WEE LIU
國立臺灣大學 1995-10 High-linearity high current drivability GaInP/GaAs MISFET using GaInP airbridge gate structure grown by GSMBE Lu, Shey-Shi; Lin, Yo-Shen
國立臺灣大學 1995 High-linearity high-current-drivability Ga0.51In0.49P/GaAs MISFET using Ga0.51In0.49P airbridge gate structure grown by GSMBE Lin, Y.S.; Lu, S.S.; Sun, T.P.

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