| 國立成功大學 |
2003-05 |
InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates
|
Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Lin, Y. C.; Kuo, C. H.; Wu, L. W.; Chen, S. C. |
| 國立成功大學 |
2003-04 |
InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering
|
Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Chen, S. C.; Liu, C. H.; Liaw, U. H. |
| 國立成功大學 |
2003-06 |
InGaN/GaN light-emitting diodes with rapidly thermal-annealed Ni/ITO p-contacts
|
Chang, Chia-Sheng; Chang, Shoou-Jinn; Su, Yan-Kuin; Chiou, Yu-Zung; Lin, Yi-Chao; Hsu, Yu-Pin; Shei, Shih-Chang; Lo, Hsin-Ming; Ke, Jung-Chin; Chen, Shih-Chih; Liu, Chun-Hsing |
| 國立成功大學 |
2005-09-20 |
InGaN/GaN MQD p-n junction photodiodes
|
Hung, Shang-Chao; Huang, C. H.; Shen, D. S.; Ji, Liang-Wen; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2004-08-25 |
InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers
|
Liu, C. H.; Chuang, R. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Kuo, C. H.; Tsai, J. M.; Lin, C. C. |
| 元智大學 |
2007-05 |
InGaN/GaN MQW Nanorods LED Fabricated by ICP-RIE and PEC Oxidation Processes
|
賴芳儀; H. W. Huang; Ching-Hua Chiu; C. F. Lai; T.C. Lu; H. C. Kuo; S. C. Wang |
| 國立交通大學 |
2019-04-02T06:04:49Z |
InGaN/GaN MQW Nanorods LED Fabricated by ICP-RIE and PEC Oxidation Processes
|
Lai, Fang-, I; Huang, H. W.; Chiu, Ching-Hua; Lai, C. F.; Lu, T. C.; Ku, H. C.; Wang, S. C. |
| 南台科技大學 |
2002 |
InGaN/GaN MQW P-N junction photodetectors
|
Y. Z. Chiou; Y. K. Su;S. J. Chang;Y. C. Lin, C. S. Chang; C. H. Chen |
| 國立成功大學 |
2002-12 |
InGaN/GaN MQW p-n junction photodetectors
|
Chiou, Yu-Zung; Su, Yan-Kuin; Chang, Shoou-Jinn; Lin, Yi-Chao; Chang, Chia-Sheng; Chen, Chin-Hsiang |
| 臺大學術典藏 |
2014 |
InGaN/GaN MQW Photoluminescence Enhancement by Localized Surface Plasmon Resonance on Isolated Ag Nanoparticles
|
Dobrovolskas, D.; Mickevi?ius, J.; Nargelas, S.; Chen, H.S.; Tu, C.G.; Liao, C.-H.; Hsieh, C.; Su, C.Y.; Tamulaitis, G.; Yang, C.C.; CHIH-CHUNG YANG; Dobrovolskas, D.;Mickevi?ius, J.;Nargelas, S.;Chen, H.S.;Tu, C.G.;Liao, C.-H.;Hsieh, C.;Su, C.Y.;Tamulaitis, G.;Yang, C.C. |
| 國立成功大學 |
2007-01 |
InGaN/GaN MQW structures prepared with various In and Ga flow rates
|
Lai, Wei-Chi; Lam, K. T.; Liu, C. H.; Chang, Shoou-Jinn |
| 國立成功大學 |
2004-03-01 |
InGaN/GaN multi-quantum dot light-emitting diodes
|
Ji, L. W.; Su, Yan-Kuin; Chang, S. T.; Chang, C. S.; Wu, L. W.; Lai, W. C.; Du, X. L.; Chen, H. |
| 國立成功大學 |
2004-04 |
InGaN/GaN multi-quantum well metal-insulator semiconductor photodetectors with photo-CVD SiO2 layers
|
Chang, Ping-Chuan; Chen, Chin-Hsiang; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, Po-Chang; Jhou, Yi-De; Liu, Chun-Hsing; Hung, Hung; Wang, Shih-Ming |
| 國立成功大學 |
2007-10-01 |
InGaN/GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer
|
Chang, Ping-Chuan; Yu, Chia-Lin |
| 國立成功大學 |
2003-05 |
InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping
|
Wen, Ten-Chin; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, L. W.; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, T. Y. |
| 國立成功大學 |
2008 |
InGaN/GaN multiple-quantum-well LEDs with Si-doped barriers
|
Hung, H.; Lam, K. T.; Chang, Shoou-Jinn; Chen, C. H.; Kuan, H.; Sun, Y. X. |
| 國立交通大學 |
2015-07-21T08:29:19Z |
InGaN/GaN multiple-quantum-well nanopyramid-on-pillar light-emitting diodes
|
Li, Yun-Jing; Chang, Jet-Rung; Chang, Shih-Pang; Sou, Kuok-Pan; Cheng, Yuh-Jen; Kuo, Hao-Chung; Chang, Chun-Yen |
| 國立成功大學 |
2013-04 |
InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-Ga2O3 Cap Layers
|
Huang, Zheng-Da; Weng, Wen-Yin; Chang, Shoou-Jinn; Hua, Yuan-Fu; Chiu, Chiu-Jung; Hsueh, Ting-Jen; Wu, San-Lein |
| 國立臺灣大學 |
2008 |
InGaN/GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks
|
Hsieh, Min-Yann; Wang, Cheng-Yin; Chen, Liang-Yi; Ke, Min-Yung; Huang, JianJang |
| 國立交通大學 |
2014-12-08T15:14:57Z |
InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition
|
Ko, T. S.; Wang, T. C.; Gao, R. C.; Lee, Y. J.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; Chen, H. G. |
| 義守大學 |
2007-01 |
InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition
|
T. S. Ko;T. C. Wang;R. C. Gao;Y. J. Lee;T. C. Lu;H. C. Kuo;S. C. Wang;H. G. Chen; 陳厚光 |
| 國立成功大學 |
2002-06 |
InGaN/GaN tunnel-injection blue light-emitting diodes
|
Wen, Ten-Chin; Chang, Shoou-Jinn; Wu, Liang-Wen; Su, Yan-Kuin; Lai, Wei-Chih; Kuo, Chih-Hung; Chen, C. H.; Sheu, Jinn-Kung; Chen, Jiann-Fuh |
| 國立成功大學 |
2013-08 |
InGaN/GaN Vertical Light-Emitting Diodes With Diamondlike Carbon/Titanium Heat-Spreading Layers
|
Tsai, Pai Yang; Huang, Hou Kuei; Sung, Chien-Min; Kan, Ming Chi; Wang, Yeong Her |
| 國立臺灣大學 |
2007 |
InGaN/GaN多層量子井半導體材料之電子顯微鏡觀察與分析
|
蔡鴻麟; Tsai, Hung-Ling |
| 國立成功大學 |
2005-06-20 |
InGaN/GaN超晶格電流分散層之InGaN/GaN多重量子井藍光發光二極體的研製
|
王安邦; Wang, An-Bang |
| 國立成功大學 |
2005-06-20 |
InGaN/GaN超晶格電流分散層之InGaN/GaN多重量子井藍光發光二極體的研製
|
王安邦; Wang, An-Bang |
| 國立交通大學 |
2014-12-13T10:28:59Z |
InGaNAs與GaNAaSb量子井特性研究
|
李威儀; LEE WEI-I |
| 正修科技大學 |
2006-05-23 |
InGaNÕAlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
|
陳進祥 |
| 臺大學術典藏 |
2018-09-10T07:03:26Z |
InGaN–GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks
|
Min-Yann Hsieh; Cheng-Yin Wang; Liang-Yi Chen; Min-Yung Ke; JianJang Huang; JIAN-JANG HUANG |
| 元智大學 |
2013 |
InGaN多重量子井太陽能電池能帶優化與特性探討
|
謝奇璋; Chi-Chang Hsieh |
| 國立彰化師範大學 |
2004 |
InGaN量子井雷射使用四元材料AlInGaN為阻擋層的特性分析
|
羅傳煜; 張詒安; 郭浩中; 郭艷光; 王興宗 |
| 臺大學術典藏 |
2018-09-10T07:09:10Z |
InGaO based double heater phase change memory cell,
|
S.-L. Wang,; C.-Y. Chen,; M.-K. Hsieh,; W.-C. Lee,; A.-H. Kung,; L.-H. Peng,; LUNG-HAN PENG |
| 國立臺灣海洋大學 |
2015 |
InGaP-GaAs-Ge太陽能電池中子電池短路電流及其電流匹配率之研究
|
Hsu, Chia-Chieh; 許家榤 |
| 國立高雄師範大學 |
2002 |
InGaP/GaAs camel-gate field effect transistor with double d-doping channel profiles
|
Jung-Hui Tsai; 蔡榮輝 |
| 國立成功大學 |
2000-10-26 |
InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications
|
Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立高雄師範大學 |
2009 |
InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer
|
Jung-Hui Tsai;Yuan-Hong Lee;Ning-Feng Dale;Wen-Shiung Lour; 蔡榮輝 |
| 國立臺灣海洋大學 |
2009 |
InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer
|
J.-H. Tsai; Y.-H. Lee; N.-F. Dale; W.-S. Lour |
| 國立交通大學 |
2014-12-08T15:24:24Z |
InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10 degrees off Misoriented GaAs Substrate
|
Yu, Hung Wei; Chung, Chen Chen; Wang, Chin Te; Hong Quan Nguyen; Binh Tinh Tran; Lin, Kung Liang; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 元智大學 |
2004-06 |
InGaP/GaAs HBT I/V Characterization for Volterra Series Analysis
|
黃建彰; 陳冠宇 |
| 元智大學 |
2004-06 |
InGaP/GaAs HBT I/V Characterization for Volterra Series Analysis
|
黃建彰; 陳冠宇 |
| 國立高雄師範大學 |
2008 |
InGaP/GaAs pnp heterojunction bipolar transistor with d-doped sheet between base-emitter junction
|
Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Chien-Ming L;Yi-Zhen Wu;Ning-Xing Su;Yin-Shan Huang; 蔡榮輝 |
| 國立臺灣海洋大學 |
2008 |
InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet Between Base-Emitter Junction
|
Jung Hui Tsai; Shao Yen Chiu; Wen Shiung Lour; Chien Ming Li; Yi Zhen Wu; Ning Xing Su; Yin Shan Huang |
| 國立高雄師範大學 |
2010 |
InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure
|
Jung-Hui Tsai;Der-Feng Guo;Yuan-Hong Lee;Ying-Feng Dai;Wen-Shiung Lour; 蔡榮輝 |
| 國立臺灣海洋大學 |
2010-07-26 |
InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure
|
Jung-Hui Tsai; Der-Feng Guo; Yuan-Hong Lee; Ning-Feng Dale; Wen-Shiung Lour |
| 國立臺灣海洋大學 |
2011-05 |
InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure
|
Wen-Shiung Lour; Ning-Feng Dale; Yuan-Hong Lee; Der-Feng Guo; Jung-Hui Tsai |
| 國立高雄師範大學 |
1997 |
InGaP/GaAs Superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)
|
Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Po-Hung Lin;Jing-Yuh Chen;Wei-Chou Wang; 蔡榮輝 |
| 國立成功大學 |
2013-12 |
InGaP/GaAs/Ge triple-junction solar cells with ZnO nanowires
|
Hou, Jei-Li; Chang, Shoou-Jinn; Hsueh, Ting-Jen; Wu, Chih-Hung; Weng, Wen-Yin; Shieh, Jia-Min |
| 元智大學 |
2011 |
InGaP/GaAs/Ge三接面串接式太陽能電池優化及製作
|
鄭勇釗; Yung-Chao Cheng |
| 國立成功大學 |
2009-05-21 |
InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure
|
Tsai, Jung-Hui; Lour, W. S.; Liu, Wen-Chau |
| 國立臺灣海洋大學 |
2010-07-26 |
InGaP/GaAs/InGaAs doped-channel field-effect transistor using camel-like gate structure
|
Jung-Hui Tsai; Der-Feng Guo; Yuan-Hong Lee; Ning-Feng Dale; Wen-Shiung Lour |
