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Showing items 527326-527335 of 2348674 (234868 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:14:52Z |
Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method
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Huang, Hung-Wen; Kao, Chih-Chiang; Chu, Jung-Tang; Wang, Wei-Chih; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Yu, Chang-Chin; Kuo, Shou-Yi |
| 國立交通大學 |
2014-12-08T15:10:35Z |
Investigation of InGaN/GaN power chip light emitting diodes with TiO(2)/SiO(2) omnidirectional reflector
|
Huang, H. W.; Lin, C. H.; Yu, C. C.; Lee, B. D.; Kuo, H. C.; Leung, K. M.; Wang, S. C. |
| 國立高雄師範大學 |
2004 |
Investigation of InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches
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Jung-Hui Tsai;Yu-Jui Chu;Jeng-Shyan Chen;King-Poul Zhu; 蔡榮輝 |
| 國立成功大學 |
1998-06 |
Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor
|
Wang, Wei-Chou; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau |
| 國立成功大學 |
2003-11 |
Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
|
Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia; Lin, Yu-Shyan |
| 國立高雄師範大學 |
1996 |
Investigation of InGaP/GaAs multiple-differential-resistance (NDR) device prepared by MOCVD
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Jung-Hui Tsai;Wen-Chau Liu;Kong-Beng Thei;Chin-Chuan Cheng;Kun-Wei Lin;H. R. Chen,; 蔡榮輝 |
| 國立高雄師範大學 |
2010 |
Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor
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Jung-Hui Tsai;Wen-Shiung Lour;Chia-Hong Huang;Ning-Feng Dale;Yuan-Hong Lee;Jhih-Syuan Sheng;Wen-Chau Liu; 黃嘉宏 |
| 國立臺灣海洋大學 |
2010-03 |
Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor
|
Jung-HuiTsai ab aaacd; Wen-ShiungLour; Chia-HongHuang; Ning-FengDale; Yuan-HongLee; Jhih-SyuanSheng; Wen-ChauLiu |
| 國立臺灣海洋大學 |
2010-03 |
Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor
|
Jung-Hui Tsai; Wen-Shiung Lour; Chia-Hong Huang; Ning-Feng Dale; Yuan-Hong Lee; Jhih-Syuan Sheng; Wen-Chau Liu |
| 國立高雄師範大學 |
2008 |
Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages
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Jung-Hui Tsai;Tzu-Yen Wen;King-Poul Zhu; 蔡榮輝 |
Showing items 527326-527335 of 2348674 (234868 Page(s) Totally)
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