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Showing items 589351-589360 of 2348719 (234872 Page(s) Totally) << < 58931 58932 58933 58934 58935 58936 58937 58938 58939 58940 > >> View [10|25|50] records per page
| 淡江大學 |
2010-06 |
Modeling the evaluation of business external competitive capabilities
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Lin, Chin-ho; Tsai, H.-L.; Kuo, Tsung-hsien.; Ho, Li-an; Ju, T. L |
| 國立成功大學 |
2022-12 |
Modeling the Evolution and Runup of Breaking Solitary and Solitary-Like Waves on Straight and Composite Slopes
|
Wu;Yun-Ta |
| 國立臺灣海洋大學 |
2011 |
Modeling the Evolution of Slope Failure as A Crack Propagation Problem
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Jeen-Shang Lin;Cheng-Yu Ku |
| 國立政治大學 |
1999-09 |
Modeling the Expectations of Inflation in the OLG Model with Genetic Programming
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陳樹衡;葉佳炫; Chen,Shu-Heng;Yeh,Chia-Hsuan |
| 淡江大學 |
1999-08-25 |
Modeling the failure mechanisms of rock mass models by UDEC
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楊長義; Yang, Z. Y.; Lee, W. S. |
| 國立臺灣大學 |
2002 |
Modeling the Fate and Transport of Hydrophobic Organic Compounds in an Unsteady River-Estuarine System
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Chen, S.C.; Kuo, J.T. |
| 國立交通大學 |
2014-12-08T15:39:00Z |
Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
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Chan, M; Su, P; Wan, H; Lin, CH; Fung, SKH; Niknejad, AM; Hu, CM; Ko, PK |
| 臺大學術典藏 |
2018-09-10T08:18:06Z |
Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
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J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
| 臺大學術典藏 |
2018-09-10T07:41:37Z |
Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
|
J. S. Su;J. B. Kuo; J. S. Su; J. B. Kuo; JAMES-B KUO |
| 臺大學術典藏 |
2018-09-10T08:46:16Z |
Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Model
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S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
Showing items 589351-589360 of 2348719 (234872 Page(s) Totally) << < 58931 58932 58933 58934 58935 58936 58937 58938 58939 58940 > >> View [10|25|50] records per page
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