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Institution Date Title Author
臺大學術典藏 2018-09-10T07:08:00Z Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics Q. Zhuang,;A. Godenir,;A. Krier,;G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:01Z Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics Q. Zhuang,;A. Godenir,;A. Krier, G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier, G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
國立臺灣大學 2008 Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics Zhuang, Q.; Godenir, A.; Krier, A.; Tsai, G.; Lin, H. H.
臺大學術典藏 2018-09-10T04:11:31Z Molecular beam epitaxial regrowth on insitu plasma-etched AlAs/AlGaAs heterostructures Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:40Z Molecular beam epitaxy grown Ga2 O3 (Gd2 O3) high 庥 dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics Lee, C.H.; Lin, T.D.; Tung, L.T.; Huang, M.L.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:22Z Molecular beam epitaxy grown Ga2O3 (Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics Lee, CH; Lin, TD; Tung, LT; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:56:15Z Molecular beam epitaxy grown template for subsequent atomic layer deposition of high k dielectrics Lee, KY; Lee, WC; Lee, YJ; Huang, ML; Chang, CH; Wu, TB; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:47Z Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG
國立成功大學 2008-11-03 Molecular beam epitaxy growth of wurtzite AlN nanotips Hsu, Kuang-Yuan; Liu, Chuan-Pu; Chung, Hung-Chin; Chiu, Yu-Chen
中原大學 1995 Molecular beam epitaxy of gallium arsenide on 0.3degree-misoriented epitaxial Si substrates W.Y.Uen;T.Ohori;T.Nishinaga

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