|
English
|
正體中文
|
简体中文
|
Total items :2853777
|
|
Visitors :
45276324
Online Users :
921
Project Commissioned by the Ministry of Education
Project Executed by National Taiwan University Library
|
|
|
|
Taiwan Academic Institutional Repository >
Browse by Title
|
Showing items 618266-618275 of 2346288 (234629 Page(s) Totally)
<< < 61822 61823 61824 61825 61826 61827 61828 61829 61830 61831 > >>
View [10|25|50] records per page
| 國立中山大學 |
2007 |
Nonvolatile polycrystalline silicon thin film transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
|
S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;P.H. Yen;C.F. Weng;S.M. Sze;C.Y. Chang;C.H. Lien |
| 國立交通大學 |
2014-12-08T15:14:28Z |
Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
|
Chen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Yeh, Ping-Hung; Weng, Chi-Feng; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin |
| 國立暨南國際大學 |
2013 |
Nonvolatile Polycrystalline-Silicon Thin-Film-Transistor Silicon-Oxide-Nitride-Oxide-Silicon Memory with Periodical Finlike Channels Fabricated Using Nanoimprint Technology
|
陳建亨?; Chen, HJH |
| 國立暨南國際大學 |
2013 |
Nonvolatile Polycrystalline-Silicon Thin-Film-Transistor Silicon-Oxide-Nitride-Oxide-Silicon Memory with Periodical Finlike Channels Fabricated Using Nanoimprint Technology
|
黃秋杰?; Huang, CJ |
| 國立交通大學 |
2018-08-21T05:54:04Z |
Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array
|
Zhou, Ya-Xiong; Li, Yi; Su, Yu-Ting; Wang, Zhuo-Rui; Shih, Ling-Yi; Chang, Ting-Chang; Chang, Kuan-Chang; Long, Shi-Bing; Sze, Simon M.; Miao, Xiang-Shui |
| 國立成功大學 |
2017 |
Nonvolatile resistive switching memory utilizing cobalt embedded in gelatin
|
Lee, C.-J.;Chang, Y.-C.;Wang, L.-W.;Wang, Y.-H. |
| 國立成功大學 |
2018-01 |
Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin
|
Lee;Cheng-Jung;Chang;Yu-Chi;Wang;Li-Wen;Wang;Yeong-Her |
| 國立暨南國際大學 |
2010 |
Nonvolatile Schottky Barrier Multibit Cell With Source-Side Injected Programming and Reverse Drain-Side Hole Erasing?
|
施君興; Shih, CH |
| 國立中山大學 |
2007 |
Nonvolatile Si/SiO2/Si3N4/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics
|
S.C. Chen;T.C. Chang;P.T. Liu;Y.C. Wu;J.Y. Chin;P.H. Yeh;L.W. Feng;S.M. Sze;C.Y. Chang;C.H. Lien |
| 國立交通大學 |
2014-12-08T15:13:06Z |
Nonvolatile Si/SiO2/SiN/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics
|
Chen, Shih-Ching; Chang, Ting-Chang; Liu, Po-Tsun; Wu, Yung-Chun; Chin, Jing-Yi; Yeh, Ping-Hung; Feng, Li-Wei; Sze, S. M.; Chang, Chun-Yen; Lien, Chen-Hsin |
Showing items 618266-618275 of 2346288 (234629 Page(s) Totally)
<< < 61822 61823 61824 61825 61826 61827 61828 61829 61830 61831 > >>
View [10|25|50] records per page
|
