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Institution Date Title Author
國立交通大學 2018-08-21T05:56:58Z Normalized Weighted Energy Detection for Spectrum Sensing Under Random Primary Signal Arrival Huang, Pei-Hsin; Chang, Ling-Hua; Wu, Jwo-Yuh
國立臺灣海洋大學 2011-04-02 Normalizing XRF-scanner data: A cautionary note on the interpretation of high-resolution records from organic-rich lakes L. Löwemark;H.-F. Chen;T.-N. Yang;M. Kylander;E.-F. Yu;Y.-W. Hsu;T.-Q. Lee;S.-R. Song;S. Jarvis
國立臺灣大學 2011 Normalizing XRF-scanner data: A cautionary note on the interpretation of high-resolution records from organic-rich lakes Lowemark, L.; Chen, H.-F.; Yang, T.-N.; Kylander, M.; Yu, E.-F.; Hsu, Y.-W.; Lee, T.-Q.; Song, S.-R.; Jarvis, S.
臺大學術典藏 2018-09-10T08:38:22Z Normalizing XRF-scanner data: A cautionary note on the interpretation of high-resolution records from organic-rich lakes L{\\"oLowemark, L.;Chen, H.-F.;Yang, T.-N.;Kyl;er, M.;Yu, E.-F.;Hsu, Y.-W.;Lee, T.-Q.;Song, S.-R.;Jarvis, S.; L{\\"oLowemark, L.; Chen, H.-F.; Yang, T.-N.; Kyl; er, M.; Yu, E.-F.; Hsu, Y.-W.; Lee, T.-Q.; Song, S.-R.; Jarvis, S.; LUDVIG LOWEMARK; SHENG-RONG SONG et al.
國立交通大學 2014-12-08T15:01:40Z Normally on reflection-type two-wavelength quantum-well modulator with balanced cavity design Tsai, CM; Lee, CP
國立成功大學 2017 Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment Lee, C.-S.;Liu, H.-Y.;Hsu, W.-C.;Chen, S.-F.
國立成功大學 2016-01 Normally-off AlGaN/GaN high-electron-mobility transistor on Si(111) by recessed gate and fluorine plasma treatment Lin, Jyun-Hao; Huang, Shyh-Jer; Lai, Chao-Hsing; Su, Yan-Kuin
國立交通大學 2019-04-02T05:58:35Z Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion Implantation Wu, Chia-Hsun; Han, Ping-Cheng; Quang Ho Luc; Hsu, Ching-Yi; Hsieh, Ting-En; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Lin, Yueh-Chin; Chang, Edward Yi
國立成功大學 2020 Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment Huang, Y.-P.;Lee, C.-S.;Hsu, W.-C.
國立交通大學 2014-12-08T15:48:19Z Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage Chang, C. -T.; Hsu, T. -H.; Chang, E. Y.; Chen, Y. -C.; Trinh, H. -D.; Chen, K. J.

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