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Institution Date Title Author
元智大學 2010-12 Optical and structural properties of stacked InN self-assembled dots grown by metalorganic chemical vapor deposition Wei-Hsuan Wu; Wen-Cheng Ke
元智大學 2014-05-07 Optical and Structural Properties of Surface and Buried InAs/GaAs Quantum Dots Yue-Han Wu; Woei-Tyng Lin; Jia-Feng Wang; Cheng-Hong Yang; Chen-Hao Chiang; Kun-An Chiu; Li Chang; Fang-I Lai; Jenn-Fang Chen
國立東華大學 2007 Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures 祁錦雲; Jim-Yong Chi;J S Wang; S H Yu; Y R Lin; H H Lin; C S Yang; T T Chen; Y F Chen; G W Shu; J L Shen; R S Hsiao; J F Chen
國立臺灣大學 2007 Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures Wang, J. S.; Yu, S. H.; Lin, Y. R.; Lin, H. H.; Yang, C. S.; Chen, T. T.; Chen, Y. F.; Shu, G. W.; Shen, J. L.; Hsiao, R. S.; Chen, J. F.; Chi, J. Y.
國立臺灣大學 2007 Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures J S Wang, S H Yu, Y R Lin, H H Lin, C S Yang, T T Chen, Y F Chen, G W Shu, J L Shen, R S Hsiao, J F Chen, J Y Chi
臺大學術典藏 2018-09-10T06:20:13Z Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures Yu, S.H.; Lin, Y.R.; Lin, H.H.; Yang, C.S.; Chen, T.T.; Chen, Y.F.; Shu, G.W.; Shen, J.L.; Hsiao, R.S.; Chen, J.F.; Chi, J.Y.; Wang, J.S.; HAO-HSIUNG LIN; YANG-FANG CHENet al.
國立成功大學 2003 Optical and structural studies of hydride vapor phase epitaxy grown GaN Chang, Yun-Chorng; Cai, A. L.; Muth, J. F.; Kolbas, R. M.; Park, M.; Cuomo, J. J.; Hanser, A.; Bumgarner, J.
元智大學 2013-01 Optical and structural studies of InN/GaN dots with varying GaN cap thickness Wen-Cheng Ke; Chia-Yu Kao; Wei-Chung Houng; Chih-An Wei
元智大學 2011-12-08 Optical and structural studies of InN/GaN dots with varying GaN cap thickness Wen-Cheng Ke; Chia-Yu Kao; Yi-Ru Su
元智大學 2011-08-01 Optical and structural studies of InN/GaN dots with varying GaN cap thickness Yi-Ru Su; Wen-Cheng Ke

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