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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T04:13:01Z	Oxide roughness effect on tunneling current of MOS diodes	Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T03:48:04Z	Oxide roughness enhanced reliability of MOS tunneling diodes	Lin, C.-H.; Lee, M.H.; Hsu, B.-C.; Chen, K.-F.; Shie, C.-R.; Liu, C.W.; CHEE-WEE LIU
國立臺灣大學	2001-12	Oxide roughness enhanced reliability of MOS tunneling diodes	Lin, C.H.; Lee, M.H.; Hsu, B.C.; Chen, K.F.; Shie, C.R.; Liu, C.W.
臺大學術典藏	2018-09-10T07:01:14Z	Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures	Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG; Chang, P; Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC
臺大學術典藏	2019-12-27T07:49:41Z	Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures	Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:01:20Z	Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures	Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG
臺大學術典藏	2022-09-21T23:30:16Z	Oxide Semiconductor Field-Effect Transistor for High-Resolution Displays Capable of Deep Black Display	Okazaki, Yutaka; Sawai, Hiromi; Endo, Masami; Motoyoshi, Ryousuke; Shimada, Daigo; Kunitake, Hitoshi; Yamazaki, Shunpei; Huang, Kou Chang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO; Chang, Shou Zen
國立臺灣科技大學	2012	Oxide solar cells fabricated using zinc oxide and plasma-oxidized cuprous oxide	Chan, Y.-M.;Wu, Y.-T.;Jou, S.
國立交通大學	2014-12-08T15:46:47Z	Oxide thickness dependence of plasma charging damage	Lin, HC; Chen, CC; Wang, MF; Hsien, SK; Chien, CH; Huang, TY; Chang, CY
國立臺灣大學	2004	Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current	Lin, Yen-Po; Hwu, Jenn-Gwo

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