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Taiwan Academic Institutional Repository >
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Showing items 799191-799200 of 2348674 (234868 Page(s) Totally) << < 79915 79916 79917 79918 79919 79920 79921 79922 79923 79924 > >> View [10|25|50] records per page
| 國立臺灣大學 |
2011 |
Switching Behavior of Vortex Cores in Bilayer Nanodots by Uniform Magnetic Field Pulses
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Yang, Jyh-Shinn; Lee, Ching-Ming; Chang, Ching-Ray |
| 臺大學術典藏 |
2019-12-19T08:38:49Z |
Switching Behavior of Vortex Cores in Bilayer Nanodots by Uniform Magnetic Field Pulses
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Yang, Jyh-Shinn;Lee, Ching-Ming;Chang, Ching-Ray; Yang, Jyh-Shinn; Lee, Ching-Ming; Chang, Ching-Ray; CHING-RAY CHANG |
| 國立彰化師範大學 |
2007 |
Switching Behaviors of Magnetic Tunnel Junction with Mono-pinned Layer and Synthetic Antiferromagnet Structure Pinned Layer
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Wu, K. M. ; Huang, C. H. ; Shen, K. H. ; Kao, M. J. ; Tsai, M. J. ; Wu, Jong-Ching; Horng, Lance |
| 國立交通大學 |
2020-10-05T01:59:51Z |
Switching between spectral broadening and narrowing of the exciton absorption band of a CH3NH3PbI3 film on altering the polarity of an applied electric field
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Awasthi, Kamlesh; Kala, Kannankutty; Rana, Shailesh; Diau, Eric Wei-Guang; Ohta, Nobuhiro |
| 臺大學術典藏 |
2005-07 |
Switching between transverse electric and magnetic mode in InAs/AlGaAs/GaAs quantum dot infrared photodetector
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Chen, Shen-De; Chen, Ying-Ying; Lee, Si-Chen; Chen, Shen-De; Chen, Ying-Ying; Lee, Si-Chen |
| 國立臺灣大學 |
2005-07 |
Switching between transverse electric and magnetic mode in InAs/AlGaAs/GaAs quantum dot infrared photodetector
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Chen, Shen-De; Chen, Ying-Ying; Lee, Si-Chen |
| 臺大學術典藏 |
2020 |
Switching biologics in psoriasis - practical guidance and evidence to support
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TSEN-FANG TSAI; Tsai Y.-C.;Tsen-Fang Tsai; Tsai Y.-C. |
| 國立臺灣大學 |
2009 |
Switching cell morphologies by extracellular matrix proteins: fibronectin enhances dermal papilla cell aggregation by increasing cell-substratum adhesivity without compromising cell motility
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Chan, CC; Huang, YC; Tu, HR; Young, TH; Lin, SJ. |
| 國立交通大學 |
2015-07-21T08:28:54Z |
Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)
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Chin, Fun-Tat; Lin, Yu-Hsien; Yang, Wen-Luh; Liao, Chin-Hsuan; Lin, Li-Min; Hsiao, Yu-Ping; Chao, Tien-Sheng |
| 國立交通大學 |
2018-08-21T05:54:08Z |
Switching characteristics in TiO2/ZnO double layer resistive switching memory device
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Jain, Praveen K.; Salim, Mohammad; Chand, Umesh; Periasamy, C. |
Showing items 799191-799200 of 2348674 (234868 Page(s) Totally) << < 79915 79916 79917 79918 79919 79920 79921 79922 79923 79924 > >> View [10|25|50] records per page
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