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Showing items 884096-884105 of 2344566  (234457 Page(s) Totally)
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Institution Date Title Author
國立臺灣大學 2005 Transport measurements on MOVPE-grown InN films Chen, Shang-Chia; Lin, Shih-Kai; Wu, Kun-Ta; Huang, Chao-Ping; Chang, Pen-Hsiu; Chen, N.C.; Chang, Chin-An; Peng, Hsian-Chu; Shih, Chuang-Feng; Liu, Kuo-Shung; Wang, Hong-Syuan; Yang, Pu-Tai; Liang, C.-T.; Chang, Y.H.; Chen, Y.F.
臺大學術典藏 2019-12-20T01:17:59Z Transport measurements on MOVPE-grown InN films Chen, S.-C.; Lin, S.-K.; Wu, K.-T.; Huang, C.-P.; Chang, P.-H.; Chen, N.C.; Chang, C.-A.; Peng, H.-C.; Shih, C.-F.; Liu, K.-S.; Wang, H.-S.; Yang, P.-T.; Liang, C.-T.; Chang, Y.H.; Chen, Y.F.; Chen, S.-C.; Lin, S.-K.; Wu, K.-T.; Huang, C.-P.; Chang, P.-H.; Chen, N.C.; Chang, C.-A.; Peng, H.-C.; Shih, C.-F.; Liu, K.-S.; Wang, H.-S.; Yang, P.-T.; Liang, C.-T.; Chang, Y.H.; Chen, Y.F.; CHI-TE LIANG
臺大學術典藏 2019-12-27T06:48:31Z Transport measurements on MOVPE-grown InN films Chen, S.-C.; Chen, S.-C.; YANG-FANG CHEN et al.
臺大學術典藏 2021-04-29T05:58:42Z Transport Mechanism in the Escherichia coli Ammonia Channel AmtB: A Computational Study Mo Y.; Cao Z.; YU-CHUN LIN
國立東華大學 2007 Transport mechanism of SiGe dot MOS tunneling diodes 林楚軒; P.-S. Kuo; C.-H. Lin;C.-Y. Peng; Y.-C. Fu; C. W. Liu
國立臺灣大學 2007 Transport mechanism of SiGe dot MOS tunneling diodes Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; Liu, C.W.
臺大學術典藏 2018-09-10T06:31:19Z Transport mechanism of SiGe dot MOS tunneling diodes Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏 2009-02-04T21:35:00Z Transport Mechanism of X Band Electrons in AlAs Electrode Through GaAs/AlAs/GaAs Structure Shieh, T. H.;Lee, Si-Chen; Shieh, T. H.; Lee, Si-Chen
國立臺灣大學 1993 Transport Mechanism of X Band Electrons in AlAs Electrode Through GaAs/AlAs/GaAs Structure Shieh, T. H.; 李嗣涔; Shieh, T. H.; Lee, Si-Chen
國立臺灣大學 1993 Transport Mechanism of X Band Electrons in AlAs Electrode Through GaAs/AlAs/GaAs Structure by Varying GaAs Well Thickness Shieh, T. H.; 李嗣涔; Shieh, T. H.; Lee, Si-Chen

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