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显示项目 212901-212925 / 2348617 (共93945页)
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机构 日期 题名 作者
臺大學術典藏 2019-10-29T07:18:25Z Atomic force microscopy: Determination of unbinding force, off rate and energy barrier for protein-ligand interaction SHI-MING LIN;Huang L.-S.;Wang Y.-M.;Lee C.-K.; Lee C.-K.; Wang Y.-M.; Huang L.-S.; SHI-MING LIN
臺大學術典藏 2007 Atomic force microscopy: Determination of unbinding force, off rate and energy barrier for protein–ligand interaction Lin, Shiming; Huang, Long-Sun; Wang, Yu-Ming; Lee, Chih-Kung; Lee, Chih-Kung; Wang, Yu-Ming; Huang, Long-Sun; Lin, Shiming
國立臺灣大學 2007 Atomic force microscopy: Determination of unbinding force, off rate and energy barrier for protein–ligand interaction Lee, Chih-Kung; Wang, Yu-Ming; Huang, Long-Sun; Lin, Shiming
國立東華大學 2002-11 Atomic Geometry, Electronic Structure, and Magnetism of 13-atom .Metal Clusters Chang, C. M.
國立東華大學 2003-03 Atomic Geometry, Electronic Structure, and Magnetism of 13-atom Metal Clusters Chang, C. M.
國立交通大學 2018-08-21T05:53:33Z Atomic Heterointerfaces and Electrical Transportation Properties in Self-Assembled LaNiO3-NiO Heteroepitaxy Zhu, Yuan Min; Thi Hien Do; Vu Thanh Tra; Yu, Rong; Chu, Ying-Hao; Zhan, Qian
國立成功大學 2022 Atomic Imaging of Interface Defects in an Insulating Film on Diamond Fujii, M.N.;Tanaka, M.;Tsuno, Tsuno T.;Hashimoto, Y.;Tomita, H.;Takeuchi, S.;Koga, S.;Sun, Z.;Enriquez, J.I.;Morikawa, Y.;Mizuno, J.;Uenuma, M.;Uraoka, Y.;Matsushita, T.
國立成功大學 2023 Atomic Imaging of Interface Defects in an Insulating Film on Diamond Fujii, M.N.;Tanaka, M.;Tsuno, Tsuno T.;Hashimoto, Y.;Tomita, H.;Takeuchi, S.;Koga, S.;Sun, Z.;Enriquez, J.I.;Morikawa, Y.;Mizuno, J.;Uenuma, M.;Uraoka, Y.;Matsushita, T.
國立交通大學 2020-07-01T05:21:19Z Atomic Imaging of Molybdenum Oxide Nanowires with Unique and Complex Periodicity by Advanced Electron Microscopy Ting, Yi-Hsin; Huang, Chun-Wei; Yasuhara, Akira; Chen, Sheng-Yuan; Chen, Jui-Yuan; Chang, Li; Lu, Kuo-Chang; Wu, Wen-Wei
國立成功大學 2020-03-11 Atomic Imaging of Molybdenum Oxide Nanowires with Unique and Complex Periodicity by Advanced Electron Microscopy Ting;Yi-Hsin;Huang;Chun-Wei;Yasuhara;Akira;Chen;Sheng-Yuan;Chen;Jui-Yuan;Chang;Li;Lu;Kuo-Chang;Wu;Wen-Wei
淡江大學 2025-07-31T04:05:17Z Atomic Insights into the Competitive Edge of Nanosheets Splitting Water Falling, Lorenz J.;Jang, Woosun;Laha, Sourav;Götsch, Thomas;Terban, Maxwell W.;Bette, Sebastian;Mom, Rik;Juan-Jesús, Velasco-Vélez;Girgsdies, Frank;Teschner, Detre;Tarasov, Andrey;Chuang, Cheng-Hao;Lunkenbein, Thomas;Axel, Knop-Gericke;Weber, Daniel;Dinnebier, Robert;Lotsch, Bettina V.;Schlögl, Robert;Jones, Travis E.
臺大學術典藏 2018-09-10T09:46:19Z Atomic ionization of germanium by neutrinos from an ab initio approach JIUNN-WEI CHEN; JIUNN-WEI CHEN
臺大學術典藏 2022-03-22T08:27:46Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:48Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-02-21T23:30:43Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang, Chun Yuan; Chou, Chun Yi; Shiue, Han Fang; Chen, Hsing Yang; Ling, Chen Hsiang; Shyue, Jing Jong; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:46Z Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
國立交通大學 2019-10-05T00:08:38Z Atomic layer defect-free etching for germanium using HBr neutral beam Fujii, Takuya; Ohori, Daisuke; Noda, Shuichi; Tanimoto, Yosuke; Sato, Daisuke; Kurihara, Hideyuki; Mizubayashi, Wataru; Endo, Kazuhiko; Li, Yiming; Lee, Yao-Jen; Ozaki, Takuya; Samukawa, Seiji
臺大學術典藏 2021-08-05T02:41:02Z Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2021-02-04T02:27:39Z Atomic layer deposited Al 2 O 3 films on NiTi shape memory alloys for biomedical applications Lin, H.-C.;Chang, Y.-L.;Han, Y.-Y.;Yang, K.-C.;Chen, M.-C.; Lin, H.-C.; Chang, Y.-L.; Han, Y.-Y.; Yang, K.-C.; Chen, M.-C.; HSIN-CHIH LIN
國立臺灣科技大學 2014 Atomic layer deposited Al2O3 barrier layers on flexible PET substrates Chang R.-C., Hou H.-T., Tsai F.-T., Jhu P.-S.
臺大學術典藏 2020-09-29T05:32:21Z Atomic layer deposited Al2O3 films on NiTi shape memory alloys for biomedical applications Chen M.-C.; Yang K.-C.; YIN-YI HAN; Lin H.-C.;Chang Y.-L.;Yin-Yi Han;Yang K.-C.;Chen M.-C.; Lin H.-C.; Chang Y.-L.
臺大學術典藏 2021-07-26T09:44:18Z Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A Young L.B;Cheng C.-K;Lu G.-J;Lin K.-Y;Lin Y.-H;Wan H.-W;Li M.-Y;Cai R.-F;Lo S.-C;Hsu C.-H;Kwo J;Hong M.; Young L.B; CHIA-KUEN CHENG et al.
臺大學術典藏 2019-12-27T07:49:16Z Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A Young, L.B.;Cheng, C.-K.;Lu, G.-J.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Li, M.-Y.;Cai, R.-F.;Lo, S.-C.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2022-03-22T08:30:46Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:36Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN

显示项目 212901-212925 / 2348617 (共93945页)
<< < 8512 8513 8514 8515 8516 8517 8518 8519 8520 8521 > >>
每页显示[10|25|50]项目