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显示项目 212911-212920 / 2348617 (共234862页)
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| 淡江大學 |
2025-07-31T04:05:17Z |
Atomic Insights into the Competitive Edge of Nanosheets Splitting Water
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Falling, Lorenz J.;Jang, Woosun;Laha, Sourav;Götsch, Thomas;Terban, Maxwell W.;Bette, Sebastian;Mom, Rik;Juan-Jesús, Velasco-Vélez;Girgsdies, Frank;Teschner, Detre;Tarasov, Andrey;Chuang, Cheng-Hao;Lunkenbein, Thomas;Axel, Knop-Gericke;Weber, Daniel;Dinnebier, Robert;Lotsch, Bettina V.;Schlögl, Robert;Jones, Travis E. |
| 臺大學術典藏 |
2018-09-10T09:46:19Z |
Atomic ionization of germanium by neutrinos from an ab initio approach
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JIUNN-WEI CHEN; JIUNN-WEI CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-02-21T23:30:43Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang, Chun Yuan; Chou, Chun Yi; Shiue, Han Fang; Chen, Hsing Yang; Ling, Chen Hsiang; Shyue, Jing Jong; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
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Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 國立交通大學 |
2019-10-05T00:08:38Z |
Atomic layer defect-free etching for germanium using HBr neutral beam
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Fujii, Takuya; Ohori, Daisuke; Noda, Shuichi; Tanimoto, Yosuke; Sato, Daisuke; Kurihara, Hideyuki; Mizubayashi, Wataru; Endo, Kazuhiko; Li, Yiming; Lee, Yao-Jen; Ozaki, Takuya; Samukawa, Seiji |
| 臺大學術典藏 |
2021-08-05T02:41:02Z |
Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
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Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-02-04T02:27:39Z |
Atomic layer deposited Al 2 O 3 films on NiTi shape memory alloys for biomedical applications
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Lin, H.-C.;Chang, Y.-L.;Han, Y.-Y.;Yang, K.-C.;Chen, M.-C.; Lin, H.-C.; Chang, Y.-L.; Han, Y.-Y.; Yang, K.-C.; Chen, M.-C.; HSIN-CHIH LIN |
| 國立臺灣科技大學 |
2014 |
Atomic layer deposited Al2O3 barrier layers on flexible PET substrates
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Chang R.-C., Hou H.-T., Tsai F.-T., Jhu P.-S. |
显示项目 212911-212920 / 2348617 (共234862页)
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