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显示项目 443616-443625 / 2348419 (共234842页) << < 44357 44358 44359 44360 44361 44362 44363 44364 44365 44366 > >> 每页显示[10|25|50]项目
| 國立成功大學 |
2002 |
GaAs(N11)A/B 基板上成長之InGaAs 量子點其光學性質,壓電效應,表層厚度與空間分析之研究(2/2)
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田興龍 |
| 國立臺灣大學 |
1993 |
GaAs-AlxGa1-xAs系統電子及電網Subband Energy之度量
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張顏暉; Chang, Yuan-Huei |
| 臺大學術典藏 |
2018-09-10T07:02:54Z |
GaAs-based bipolar cascade light-emitting-diodes and superluminescent- diodes at the 1.04-μm wavelength regime
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Guol, S.-H. and Wang Jr., H. and Wu, Y.-H. and Lin, W. and Yang, Y.-J. and Sun, C.-K. and Pan, C.-L. and Shi, J.-W.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T03:29:19Z |
GaAs-based long-wavelength traveling-wave photodetector
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Shi, Jin-Wei; Sun, Chi-Kuang; Yang, Ying-Jay; Chiu, Yi-Jen; Bowers, John E.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T03:51:07Z |
GaAs-based long-wavelength traveling-wave photodetector
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Y. J. Yang,; J. E. Bowers; YING-JAY YANG; J.-W. Shi; K.-G. Gan; Y.-J. Chiu; C.-K. Sun |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition
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Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:58Z |
GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
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Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
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Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 南台科技大學 |
2021-11 |
GaAs-Based p-i-n Narrow Bandpass 850 nm IR Photodetector With a p-AlGaAs Filter Layer
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Chun-Kai Wang;Yu-Zung Chiou;Yi-Lo Huang |
| 臺大學術典藏 |
2018-09-10T07:35:54Z |
GaAs-based transverse junction superluminescent diode at 1.1um wavelength region
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Guol, S.-H.;Chou, M.-G.;Wang, J.-H.;Yang, Y.-J.;Sun, C.-K.;Shi, J.-W.; Guol, S.-H.; Chou, M.-G.; Wang, J.-H.; Yang, Y.-J.; Sun, C.-K.; Shi, J.-W.; CHI-KUANG SUN |
显示项目 443616-443625 / 2348419 (共234842页) << < 44357 44358 44359 44360 44361 44362 44363 44364 44365 44366 > >> 每页显示[10|25|50]项目
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