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显示项目 444506-444515 / 2348419 (共234842页) << < 44446 44447 44448 44449 44450 44451 44452 44453 44454 44455 > >> 每页显示[10|25|50]项目
| 國立成功大學 |
2011 |
GaN Epilayer Grown on Ga(2)O(3) Sacrificial Layer for Chemical Lift-Off Application
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Tsai, Tsung-Yen; Horng, Ray-Hua; Wuu, Dong-Sing; Ou, Sin-Liang; Hung, Ming-Tsung; Hsueh, Hsu-Hung |
| 大葉大學 |
2011 |
GaN Epilayer Grown on Ga2O3 Sacrificial Layer for Chemical Lift-Off Application
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Wuu, Dong-Sing;Tsai, Tsung-Yen;Horng, Ray-Hua;Ou, Sin-Liang;Hung, Ming-Tsung;Hsueh, Hsu-Hung |
| 國立成功大學 |
2011-02 |
GaN Epitaxial Layers Prepared on Nano-Patterned Si(001) Substrate
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Huang, C. C.; Chang, S. J.; Kuo, C. H.; Ko, C. H.; Wann, Clement H.; Cheng, Y. C.; Lin, W. J. |
| 國立臺灣科技大學 |
2013 |
GaN FET應用於高頻化錯相式降壓型功率因數修正器之研製
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張家鏵 |
| 臺大學術典藏 |
2022-08-09T03:51:02Z |
GaN growth by nitrogen ECR-CVD method
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Chen K.H.; Chao C.H.; Chuang T.J.; Yang Y.J.; Chen L.C.; Chen C.K.; Huang Y.F.; Yang C.H.; Lin H.Y.; Chang I.M.; Chen Y.F.; Chen K.H.; Chen L.C.; LI-CHYONG CHEN |
| 國立交通大學 |
2014-12-08T15:11:14Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si(3)N(4) buffer structure
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Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2019-04-02T06:01:07Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structure
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Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2014-12-16T06:15:27Z |
GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same
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Chang, Edward Yi; Lu, Chung-Yu |
| 國立交通大學 |
2014-12-12T01:36:05Z |
GaN HEMT 打線接合構裝技術之研究
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戴光助; Tai, Kuang-Chu; 成維華; Chieng,Wei-Hua |
| 國立交通大學 |
2019-04-02T06:04:21Z |
GaN HEMTs Power Module Package Design and Performance Evaluation
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Ho, Chung-Hsiang; Chou, Po-Chien; Cheng, Stone |
显示项目 444506-444515 / 2348419 (共234842页) << < 44446 44447 44448 44449 44450 44451 44452 44453 44454 44455 > >> 每页显示[10|25|50]项目
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