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显示项目 457776-457785 / 2346275 (共234628页)
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| 國立成功大學 |
2006-02-24 |
Growth of free-standing diamond films of hemispheric shells
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Huang, Shr-Ming; Hong, Franklin Chau-Nan |
| 國立交通大學 |
2014-12-08T15:09:46Z |
Growth of free-standing GaN layer on Si(111) substrate
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Yang, Tsung Hsi; Ku, Jui Tai; Chang, Jet-Rung; Shen, Shih-Guo; Chen, Yi-Cheng; Wong, Yuen Yee; Chou, Wu Ching; Chen, Chien-Ying; Chang, Chun-Yen |
| 臺大學術典藏 |
1997 |
Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
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Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG |
| 國立成功大學 |
2011-09 |
Growth of Ga(2)O(3) Nanowires and the Fabrication of Solar-Blind Photodetector
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Weng, W. Y.; Hsueh, T. J.; Chang, Shoou-Jinn; Huang, G. J.; Hung, S. C. |
| 實踐大學 |
2011 |
Growth of Ga2O3 Nanowires and the Fabrication of Solar-Blind Photodetector
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Weng, W.Y.;Hsueh, T.J.;Chang, S.J.;Huang, G.J.;Hung, S.C. |
| 國立成功大學 |
2011-09 |
Growth of Ga2O3 nanowires and the fabrication of solar-blind photodetector
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Weng, W.-Y.;Hsueh, T.-J.;Chang, Shoou-Jinn;Huang, G.-J.;Humg, S.-C. |
| 國立中山大學 |
1998 |
Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs
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M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen |
| 國立交通大學 |
2014-12-16T06:16:17Z |
Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer
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Chang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen |
| 國立交通大學 |
2014-12-16T06:14:31Z |
Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer
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Chang; Edward Y.; Luo; Guangli; Yang; Tsung Hsi; Chung Yen |
| 國立交通大學 |
2014-12-16T06:16:05Z |
Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layer
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Chang, Edward Y.; Luo, Guangli; Yang, Tsung-Hsi; Chang, Chun-Yen |
显示项目 457776-457785 / 2346275 (共234628页)
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每页显示[10|25|50]项目
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