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显示项目 457811-457820 / 2348487 (共234849页)
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机构 日期 题名 作者
國立成功大學 2008-01 Growth and characterization of epitaxial ZnO nanowall networks using metal organic chemical vapor deposition Wu, Chia-Cheng; Wuu, Dong-Sing; Chen, Tsai-Ning; Yu, Ting-En; Lin, Po-Rung; Horng, Ray-Hua; Lai, Hsin-Yi
中華大學 2006 Growth and characterization of epitaxial ZnO on Yttria-stabilized zirconia 梁美惠; Liang, Mei-Hui
國立臺灣科技大學 2010-01 Growth and characterization of Er doped ZnO prepared by reactive ion beam sputtering Chung-Chi Liau;Liang-Chiun Chao
國立臺灣科技大學 2010 Growth and characterization of Er doped ZnO prepared by reactive ion beam sputtering Liau C.-C.; Chao L.-C.
臺大學術典藏 2022-08-09T03:50:37Z Growth and characterization of gallium nitride nanowires produced on different sol-gel derived catalyst dispersed in titania and polyvinyl alcohol matrix Chatterjee A.; Chattopadhyay S.; Hsu C.W.; Shen C.H.; Chen L.C.; Chen C.C.; Chen K.H.; Lee H.Y.; Chatterjee A.; Chattopadhyay S.; Hsu C.W.; Shen C.H.; Chen L.C.; Chen C.C.; Chen K.H.; Lee H.Y.; LI-CHYONG CHEN
臺大學術典藏 2019-12-27T06:48:36Z Growth and characterization of GaN films on (0001) sapphire substrates by alternate supply of trimethylgallium and NH 3 Wang, H.Y.; Wang, H.Y.; YANG-FANG CHEN et al.
國立臺灣大學 1999 Growth and characterization of GaN films on (0001) sapphire substrates by alternate supply of trimethylgallium and NH3 Wang, H. Y.; Huang, S. C.; Yan, T. Y.; Gong, J. R.; Lin, T. Y.; Chen, Y. F.
國立臺灣海洋大學 1999-01-29 Growth and characterization of GaN films on (0001) sapphire substrates by alternative supply of trimethylgallium and NH3 H.Y. Wang;S.C. Huang;T.Y. Yan;J.R. Gong;T.Y. Lin;Y.F. Chen
元智大學 2013-06-30 Growth and Characterization of GaN Films on Sub-micro Patterned Sapphire Substrate Wen-Cheng Ke; Wei-Chung Houng; Tony Houng; James Ho
國立臺灣大學 2004-06 Growth and Characterization of GaN Nanowires Produced on Different Sol-gel Derived Catalyst Dispersed in TiO2 and Polyvinyl Alcohol Matrix Chatterjee A; Chattopadhyay S; Hsu CW; Shen CH; Chen LC; Chen KH; Lee HY

显示项目 457811-457820 / 2348487 (共234849页)
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