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教育部委托研究计画 计画执行:国立台湾大学图书馆
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显示项目 458446-458455 / 2348419 (共234842页)
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| 淡江大學 |
2005-05 |
Growth of high quality AlN on diamond using Ti buffer layer
|
林諭男 |
| 淡江大學 |
2006-02 |
Growth of high quality AlN thin films on diamond using TiN/Ti buffer layer
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林諭男; Lin, I-nan |
| 臺大學術典藏 |
2018-09-10T06:56:07Z |
GROWTH OF HIGH TC-SUPERCONDUCTING Y-BA-CU-O THIN-FILMS BY A CHEMICAL SPRAY PYROLYSIS METHOD
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Chu, J. J.;Liu, R. S.;Wu, P. T.;Chen, L. J.; Chu, J. J.; Liu, R. S.; Wu, P. T.; Chen, L. J.; RU-SHI LIU |
| 國立交通大學 |
2014-12-08T15:11:22Z |
Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions
|
Huang, Ting-Kai; Chen, Ying-Chieh; Ko, Hsin-Chun; Huang, Hsin-Wei; Wang, Chia-Hsin; Lin, Huang-Kai; Chen, Fu-Rong; Kai, Ji-Jung; Lee, Chi-Young; Chiu, Hsin-Tien |
| 元智大學 |
2009-01 |
Growth of high-density InN nanodots by pulsed MOVPE
|
柯文政; 林文仁; 李大青; 林家慶 |
| 國立臺灣海洋大學 |
2002-03-15 |
Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
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Fu-Hsiang Yang;Jih-Sheng Hwang;Ying-Jay Yang;Kuei-Hsien Chen;Jih-Hsiang Wang |
| 國立臺灣大學 |
2002 |
Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
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Yang, Fu-Hsiang; Hwang, Jih-Sheng; Yang, Ying-Jay; Chen, Kuei-Hsien; Wang, Jih-Hsiang |
| 國立交通大學 |
2014-12-08T15:33:45Z |
Growth of high-quality epitaxial ZnO films on (10-10) sapphire by atomic layer deposition with flow-rate interruption method
|
Huang, Jheng-Ming; Ku, Ching-Shun; Lee, Hsin-Yi; Lin, Chih-Ming; Chen, San-Yuan |
| 國立交通大學 |
2014-12-08T15:25:54Z |
Growth of high-quality GaAs epitaxial layers on Si substrite by using a novel GeSi buffer strucuture
|
Chang, EY; Luo, GL; Yang, TH |
| 國立交通大學 |
2014-12-08T15:40:52Z |
Growth of high-quality Ge epitaxial layers on Si(100)
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Luo, GL; Yang, TH; Chang, EY; Chang, CY; Chao, KA |
显示项目 458446-458455 / 2348419 (共234842页)
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每页显示[10|25|50]项目
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