|
显示项目 471281-471290 / 2348638 (共234864页)
<< < 47124 47125 47126 47127 47128 47129 47130 47131 47132 47133 > >>
每页显示[10|25|50]项目
| 國立交通大學 |
2017-04-21T06:55:20Z |
High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
|
Chiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Liu, Shin Chien; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:35:45Z |
High-PF and Ultra-Low-THD Power Factor Correction Controller by Sinusoidal-Wave Synthesis and Optimized THD Control
|
Chang, Chih-Wei; Ni, Chia-Lung; Tsai, Jen-Chieh; Chen, Yi-Ting; Chen, Chun-Yen; Chen, Ke-Horng; Chen, Long-Der; Yang, Cheng-Chen |
| 臺大學術典藏 |
2022-08-09T03:50:27Z |
High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment
|
Hsiao C.-L.; Liu T.-W.; Wu C.-T.; Hsu H.-C.; Hsu G.-M.; Chen L.-C.; Shiao W.-Y.; Yang C.C.; Gällström A.; Holtz P.-O.; Chen C.-C.; Chen K.-H.; Hsiao C.-L.; Liu T.-W.; Wu C.-T.; Hsu H.-C.; Hsu G.-M.; Chen L.-C.; Shiao W.-Y.; Yang C.C.; LI-CHYONG CHEN |
| 國立臺灣師範大學 |
2014-12-02T06:41:34Z |
High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment
|
C.-L. Hsiao; T.-W. Liu; C.-T. Wu; H.-C. Hsu; G.-M. Hsu; L.-C. Chen; W.-Y. Shiao; C.-C. Yang; A. Gaellstroem; P.-O. Holtz; Chia-Chun Chen; K.-H. Chen |
| 國立臺灣大學 |
2008 |
High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment
|
Hsiao, Ching-Lien; Liu, Ting-Wei; Wu, Chien-Ting; Hsu, Hsu-Cheng; Hsu, Geng-Ming; Chen, Li-Chyong; Shiao, Wen-Yu; Yang, C. C.; G?llstr?m, Andreas; Holtz, Per-Olof; Chen, Chia-Chun; Chen, Kuei-Hsien |
| 國立臺灣大學 |
2008-03 |
High-phase-purity Zinc-blende InN on R-plane Sapphire Substrate with Controlled Nitridation Pretreatment
|
Hsiao, Ching-Lien; Liu, Ting-Wei; Wu, Chien-Ting; Hsu, Hsu-Cheng; Hsu, Geng-Min; Chen, Li-Chyong; Hsiao, Wen-Yu; Yang, C. C.; Gä llströ m, Andreas; Holtz, Per-Olof; Chen, Chia-Chun; Chen, Kuei-Hsien |
| 臺大學術典藏 |
2018-09-10T06:58:05Z |
High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment
|
Liu, Ting-Wei; Wu, Chien-Ting; Hsu, Hsu-Cheng; Hsu, Geng-Min; Chen, Li-Chyong; Hsiao, Wen-Yu; Yang, C. C.; Gä llströ m,; reas; Holtz, Per-Olof; Chen, Chia-Chun; Chen, Kuei-Hsien; Hsiao, Ching-Lien; CHIH-CHUNG YANG; Chen, Li-Chyong et al. |
| 國立成功大學 |
1999-08 |
High-porosity carbons prepared from bituminous coal with potassium hydroxide activation
|
Teng, Hsisheng; Hsu, Li-Yeh |
| 東海大學 |
2006 |
High-potentiality preliminary selection criteria and transformation time-dependent factors analysis for establishing Epstein-Barr virus transformed human lymphoblastoid cell lines
|
Chang, I.-C.a , Wu, J.-Y.b, Lu, H.-I.a, Ko, H.-W.a, Kuo, J.-L.a, Wang, C.-Y.a, Shen, P.-S.c, Hwang, S.-M. |
| 中國醫藥大學 |
2006-11 |
High-potentiality preliminary selection criteria and transformation time-dependent factors analysis for establishing Epstein–Barr virus transformed human lymphoblastoid cell lines
|
(I.-C. Chang*);鄔哲源;(H.-I. Lu);(H.-W. Ko);(J.-L. Kuo);(C.-Y. Wang);(S.-M. Hwang) |
顯示項目 471281-471290 / 2348638 (共234864頁)
<< < 47124 47125 47126 47127 47128 47129 47130 47131 47132 47133 > >>
每頁顯示[10|25|50]項目
|
