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显示项目 525606-525615 / 2348719 (共234872页) << < 52556 52557 52558 52559 52560 52561 52562 52563 52564 52565 > >> 每页显示[10|25|50]项目
| 國立臺灣大學 |
1994-06 |
Inversion of unimodular matrices via state-space approach
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Chen, Hung-Chou; Chang, Fan-Ren; Ju, Gwo-Jeng |
| 國立臺灣大學 |
1993 |
Inversion Polymorphism of Drosophila Ruberrima in Taiwan
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張慧羽; Fang, S.; 林飛棧; Chang, Hwei-Yu; Fang, S.; Lin, Fei-Jann |
| 國立成功大學 |
1996 |
Inversion tectonics in the fold-thrust belt of the Foothills of the Chiayi-Tainan area, Southwestern Taiwan
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Chang, Yu-long; Lee, Chung-I; Lin, Ching-weei; Hsu, Chaw-hsing; Mao, Erh-Wei |
| 中原大學 |
1998-02 |
Inversion Temperatures and Molecular Interactions
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Ding-Wei Huang |
| 臺大學術典藏 |
2018-09-10T07:34:16Z |
Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts
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Liao, Chichih;Cheng, Donald;Cheng, Chienchia;Cheng, KY;Feng, Milton;Chiang, TH;Kwo, J;Hong, M; Liao, Chichih; Cheng, Donald; Cheng, Chienchia; Cheng, KY; Feng, Milton; Chiang, TH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Inversion-channel GaAs (100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces
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Chang, YC;Chang, WH;Merckling, C;Kwo, J;Hong, M; Chang, YC; Chang, WH; Merckling, C; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al2O3as a gate dielectric on different reconstructed surfaces
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Chang, Y.C.;Chang, W.H.;Merckling, C.;Kwo, J.;Hong, M.; Chang, Y.C.; Chang, W.H.; Merckling, C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric
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Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:40Z |
Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectric
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Lee, C.H.; Shiu, K.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Tung, L.T.; Chiu, H.C.; Chang, W.H.; Chang, Y.C. |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2 O 3 as gate dielectric
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Chang, YC;Chang, WH;Chiu, HC;Chang, YH;Tung, LT;Lee, CH;Hong, M;Kwo, J;Hong, JM;Tsai, CC; Chang, YC; Chang, WH; Chiu, HC; Chang, YH; Tung, LT; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG |
显示项目 525606-525615 / 2348719 (共234872页) << < 52556 52557 52558 52559 52560 52561 52562 52563 52564 52565 > >> 每页显示[10|25|50]项目
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