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显示项目 545381-545390 / 2348674 (共234868页)
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机构 日期 题名 作者
南台科技大學 2007 Leakage current analysis of nitride based optoelectronics by emission microscopy inspection Y. Z. Chiou; K. W. Lin
南台科技大學 2008-09 Leakage Current Analysis of Nitride-Based Photodetectors by Emission Microscopy Inspection Y. Z. Chiou
國立交通大學 2014-12-16T06:14:24Z Leakage current cut-off device for ternary content addressable memory Huang; Po-Tsang; Liu; Wen-Yen; Hwang; Wei
國立交通大學 2014-12-16T06:15:48Z Leakage current cut-off device for ternary content addressable memory Huang, Po-Tsang; Liu, Wen-Yen; Hwang, Wei
國立高雄師範大學 2002-12 Leakage Current Improvement of AlGaN/GaN HFETs by High Resistive Mg-Doped GaN Layer Ruey-Lue Wang;S. C. Wei;Y. K. Su;S. J. Chang;R. L. Wang;T. H. Hsu; 王瑞祿
國立中山大學 2007 Leakage Current Improvement of Liquid Phase Deposited TixSi(1-x)Oy Films on Amorphous Silicon with Ammonium Hydroxide Incorporation by Post Metallization Annealing Ming-Kwei Lee; Hung-Chang Lee; Chih-Te Chang; Chih-Min Hsu
國立交通大學 2014-12-08T15:15:07Z Leakage current improvement of Ni/TiNiO/TaN metal-insulator-metal capacitors using optimized N+ plasma treatment and oxygen annealing Huang, C. C.; Cheng, C. H.; Chin, Albert; Chou, C. P.
修平科技大學 2004-03 Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO3 Thin Films Prepared by a Diol-Based Sol-Gel Method M. C. Kao;Y. C. Chen;H. Z. Chen;C. M. Wang;Yi-Ju Li
國立中山大學 2004 Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO3 Thin Films Prepared by a Diol-Based Sol-Gel Method M.C. Kao; Y.C. Chen; H.Z. Chen; C.M. Wang; Y.J. Li
國立中山大學 2003-08 Leakage Current Mechanisms in Rapid Thermal Annealed LiTaO3 Thin Films Prepared by a Diol-Based Sol-Gel Method M.C. Kao;Y.C. Chen;H.Z. Chen;C.M. Wang;Y.J. Li

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