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机构 日期 题名 作者
國立交通大學 2019-04-03T06:47:02Z Low threshold current, low resistance 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE Yu, Hsin-Chieh; Wang, Jyh-Shyang; Su, Yan-Kuin; Chang, Shoou-Jinn; Kuo, Hao-Chung; Lai, Fang-, I; Chang, Y. H.; Yang, Hong-Pin D.
國立成功大學 2016-12 Low threshold of a continuous-wave mode-locked and azimuthally polarized Nd:YVO4 laser with a semiconductor saturable absorber mirror Hong, Kun-Guei; Hung, Bi-Jin; Wei, Ming-Dar
東海大學 20090830-- Low threshold passively mode-locked Nd:GdVO4 lasers with a semiconductor saturable absorber output coupler Wu, H.-H., Hsu, M.-H., Hou, J.-H.
東海大學 20090830-- Low threshold passively mode-locked Nd:GdVO4 lasers with a semiconductor saturable absorber output coupler Wu, H.-H., Hsu, M.-H., Hou, J.-H.
國立中山大學 1990 Low Threshold Vertical Cavity Surface Emitting Lasers with Metallic Reflectors E.F. Schubert;L.W. Tu;R.F. Kopf;G.J. Zydzik;D.G. Deppe
國立交通大學 2014-12-08T15:11:24Z Low threshold voltage and high drive current poly-silicon thin film transistors using Ytterbium metal gate and LaAlO3 dielectric Hung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Lin, J. W.; Hsieh, I. J.
國立交通大學 2014-12-08T15:16:48Z Low threshold voltage CMOSFETs with NiSi fully silicided gate and Modified Schottky barrier source/drain junction Lin, Chia-Pin; Tsui, Bing-Yue; Hsieh, Chih-Ming; Huang, Chih-Feng
國立中山大學 2001-07 Low Threshold Voltage for Electroluminescence Devices of Fully Conjugated Heterocyclic Aromatic Rigid-rod Polymers S.J. Bai;C.C. Wu;C.F. Chang;T.S. Sheu
臺大學術典藏 2018-09-10T04:58:46Z Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy Chang, F.Y.; Lee, J.D.; Lin, H.H.; HAO-HSIUNG LIN
國家衛生研究院 2015-11-30 Low thrombospondin 2 expression is predictive of low tumor regression after neoadjuvant chemoradiotherapy in rectal cancer Lin, CY;Lin, CY;Chang, IW;Sheu, MJ;Li, CF;Lee, SW;Lin, LC;Lee, YE;He, HL

显示项目 558671-558680 / 2351427 (共235143页)
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