|
显示项目 558916-558925 / 2348487 (共234849页)
<< < 55887 55888 55889 55890 55891 55892 55893 55894 55895 55896 > >>
每页显示[10|25|50]项目
| 國立交通大學 |
2020-02-02T23:55:32Z |
Low-resistance and high-strength copper direct bonding in no-vacuum ambient using highly (111)-oriented nano-twinned copper
|
Juang, Jing Ye; Shie, Kai Cheng; Hsu, Po-Ning; Li, Yu Jin; Tu, K. N.; Chen, Chin |
| 國立成功大學 |
2001-05 |
Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices
|
Kuo, C. H.; �Sheu, �Jinn-Kong; Chi, G. C.; Huang, Y. L.; Yeh, T.W. |
| 國立彰化師範大學 |
2009-04 |
Low-resistance Nonalloyed Ohmic Contacts on Undoped ZnO Films Grown by Pulsed-laser Deposition
|
Tsai, Chia-Lung; Lin, Yow-Jon; Chin, Yi-Min; Liu, W. R. ; Hsieh, W. F. ; Hsu, C. H. ; Chu, Jian-An |
| 國立交通大學 |
2014-12-08T15:44:38Z |
Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization
|
Chu, CF; Yu, CC; Wang, YK; Tsai, JY; Lai, FI; Wang, SC |
| 國立交通大學 |
2014-12-08T15:49:16Z |
Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate
|
Fan, JC; Tsai, CM; Chen, KY; Wang, SY; Lin, G; Lee, CP |
| 臺大學術典藏 |
2018-09-10T04:51:55Z |
Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated Process
|
Hong, M;Vakhshoori, D;Mannaerts, JP;Kwo, J; Hong, M; Vakhshoori, D; Mannaerts, JP; Kwo, J; MINGHWEI HONG |
| 國立成功大學 |
2024-10-21 |
Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T′-MoTe2/2H-MoTe2 heterojunctions grown by chemical vapor deposition
|
Chi;Ping-Feng;Wang;Jing-Jie;Zhang;Jing-Wen;Chuang;Yung-Lan;Lee;Ming-Lun;Sheu;Jinn-Kong |
| 中國文化大學 |
2018 |
Low-resistivity oxides in TixFeCoNi thin films after vacuum annealing
|
Yang, YC (Yang, Ya-Chu); Tsau, CH (Tsau, Chun-Huei); Yeh, JW (Yeh, Jien-Wei); Che, SK (Che, Swe-Kai) |
| 中國文化大學 |
2018 |
Low-resistivity oxides in TixFeCoNi thin films after vacuum annealing
|
Yang, YC (Yang, Ya-Chu); Tsau, CH (Tsau, Chun-Huei); Yeh, JW (Yeh, Jien-Wei); Che, SK (Che, Swe-Kai) |
| 國立臺灣科技大學 |
2013 |
Low-resistivity, high-transmittance Ga:ZnO films prepared through metalorganic chemical vapor deposition using an inexpensive solution of diethylzinc in n-hexane as the Zn precursor
|
Giang Nguyen, N.;Thanh Ho, V.T.;Hong, L.-S. |
显示项目 558916-558925 / 2348487 (共234849页)
<< < 55887 55888 55889 55890 55891 55892 55893 55894 55895 55896 > >>
每页显示[10|25|50]项目
|
