| 國立成功大學 |
2017 |
Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION
|
Su, C.-J.;Tang, Y.-T.;Tsou, Y.-C.;Sung, P.-J.;Hou, F.-J.;Wang, C.-J.;Chung, S.-T.;Hsieh, C.-Y.;Yeh, Yeh Y.-S.;Hsueh, F.-K.;Kao, Kao K.-H.;Chuang, S.-S.;Wu, C.-T.;You, T.-Y.;Jian, Y.-L.;Chou, T.-H.;Shen, Y.-L.;Chen, B.-Y.;Luo, G.-L.;Hong, T.-C.;Huang, K.-P.;Chen, M.-C.;Lee, Y.-J.;Chao, T.-S.;Tseng, Tseng T.-Y.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H. |
