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显示项目 707601-707610 / 2351377 (共235138页)
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机构 日期 题名 作者
國立臺灣海洋大學 1989 Radiation from Turbulent Diffusion Flames G. M. Faeth;J. P. Gore;S. G. Chuech;S.-M. Jeng
臺大學術典藏 1993 Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學 1993 Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides 胡振國; Hwu, Jenn-Gwo
國立暨南國際大學 2006 Radiation hardness comparison of MOS capacitors using tungsten polycide and cobalt polycide as gate electrode materials 呂育興?; Lu, YH
國立暨南國際大學 2005 Radiation hardness comparison of MOS capacitors using tungsten polycide and cobalt polycide as gate electrode materials 吳幼麟?; Wu, YL
臺大學術典藏 2009-04-27T04:27:06Z Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides Hwu, Jenn-Gwo; Lee, K. C.; 胡振國; Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C.
臺大學術典藏 2009-04-27T04:28:29Z Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides Lee, G. C.; Hwu, Jenn-Gwo; Lee, G. C.; 胡振國; Lee, G. C.; Hwu, Jenn-Gwo; Lee, G. C.
國立臺灣大學 1995 Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides 胡振國; Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C.
國立臺灣大學 1993 Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides 胡振國; Lee, G. C.; Hwu, Jenn-Gwo; Lee, G. C.
臺大學術典藏 2020-06-11T06:23:10Z Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; SI-CHEN LEE

显示项目 707601-707610 / 2351377 (共235138页)
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每页显示[10|25|50]项目