| 臺大學術典藏 |
2022-04-25T06:41:32Z |
Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1?xZrxO2 diodes
|
Hsiang K.-Y;Liao C.-Y;Wang J.-F;Lou Z.-F;Lin C.-Y;Chiang S.-H;Liu C.-W;Hou T.-H;Lee M.-H.; Hsiang K.-Y; Liao C.-Y; Wang J.-F; Lou Z.-F; Lin C.-Y; Chiang S.-H; Liu C.-W; Hou T.-H; Lee M.-H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-10-21T23:27:34Z |
Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1−xZrxO2 diodes
|
Hsiang, Kuo Yu; Liao, Chun Yu; Wang, Jer Fu; Lou, Zhao Feng; Lin, Chen Ying; Chiang, Shih Hung; CHEE-WEE LIU; Hou, Tuo Hung; Lee, Min Hung |
| 國立交通大學 |
2014-12-08T15:31:10Z |
Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics
|
Lee, Dai-Ying; Tsai, Tsung-Ling; Tseng, Tseung-Yuen |
| 國立高雄師範大學 |
2012 |
Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types
|
Chih-Yu Huang;C. C. Lin;Z. L. Tseng;K. Y. Lo; 黃智裕 |
| 國立高雄師範大學 |
2012 |
Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types
|
Cheng-Shong Hong;C. C. Lin;Z. L. Tseng;K. Y. Lo;C. Y. Huang;S. Y. Chu;C. C. Chang;C. J. Wu; 洪群雄 |
| 國立成功大學 |
2012-11-12 |
Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types
|
Lin, Chun-Cheng; Tseng, Zong-Liang; Lo, Kuang-Yao; Huang, Chih-Yu; Hong, Cheng-Shong; Chu, Sheng-Yuan; Chang, Chia-Chiang; Wu, Chin-Jyi |
| 國立交通大學 |
2015-07-21T08:29:17Z |
Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device
|
Tsai, Tsung-Ling; Ho, Tsung-Han; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:36Z |
Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer
|
Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立成功大學 |
2013-04 |
Unipolar resistive switching in a transparent ITO/SiOx/ITO sandwich fabricated at room temperature
|
Liu, Chih-Yi; Shih, Ya-Ru; Huang, Shyh-Jer |
| 國立交通大學 |
2014-12-08T15:30:43Z |
Unipolar Resistive Switching in ZrO2 Thin Films
|
Zhang, Guo-Yong; Lee, Dai-Ying; Yao, I-Chuan; Hung, Chung-Jung; Wang, Sheng-Yu; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
