| 國立成功大學 |
2011-11 |
Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors
|
Chiou, Ya-Lan; Lee, Ching-Ting |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
1999 |
Band alignment at organic-inorganic semiconductor interfaces: α-NPD and CuPc on InP(110)
|
Chass\\'e; CHIH-I WU |
| 國立交通大學 |
2018-08-21T05:54:02Z |
Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions
|
Chiu, Ming-Hui; Tseng, Wei-Hsuan; Tang, Hao-Ling; Chang, Yung-Huang; Chen, Chang-Hsiao; Hsu, Wei-Ting; Chang, Wen-Hao; Wu, Chih-I; Li, Lain-Jong |
| 國立交通大學 |
2019-04-02T05:59:38Z |
Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy
|
Sun, Shun-Ming; Liu, Wen-Jun; Wang, Yong-Ping; Huan, Ya-Wei; Ma, Gan; Zhu, Bao; Wu, Su-Dong; Yu, Wen-Jie; Horng, Ray-Hua; Xia, Chang-Tai; Sun, Qing-Qing; Ding, Shi-Jin; Zhang, David Wei |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 國立臺灣大學 |
2009 |
Band alignment of InAs1-xSbx (0.05?x?0.13)/InAs0.67P0.23Sb0.10 heterostructures
|
Wu, Chen-Jun; Tsai, Gene; Lin, Hao-Hsiung |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum well
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum wells
|
C. J. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 國立交通大學 |
2019-04-02T06:00:32Z |
Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy
|
Huan, Ya-Wei; Wang, Xing-Lu; Liu, Wen-Jun; Dong, Hong; Long, Shi-Bing; Sun, Shun-Ming; Yang, Jian-Guo; Wu, Su-Dong; Yu, Wen-Jie; Horng, Ray-Hua; Xia, Chang-Tai; Yu, Hong-Yu; Lu, Hong-Liang; Sun, Qing-Qing; Ding, Shi-Jin; Zhang, David Wei |
| 國立交通大學 |
2014-12-08T15:31:26Z |
Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
|
Hai Dang Trinh; Minh Thuy Nguyen; Lin, Yueh Chin; Quoc Van Duong; Hong Quan Nguyen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:30:42Z |
Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer
|
Liao, Yu-An; Hsu, Wei-Ting; Huang, Shih-Han; Chiu, Pei-Chin; Chyi, Jen-Inn; Chang, Wen-Hao |
| 臺大學術典藏 |
2021-09-02T00:03:49Z |
Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces
|
Lan H.-S;Liu C.W.; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 國立成功大學 |
2006-11-06 |
Band anticrossing in InGaPN alloys induced by N-related localized states
|
Lin, Kuang-I; Huang, Wung-Hong |
| 國立彰化師範大學 |
2010-08 |
Band Bending at the Conducting Polymer/Indium Tin Oxide Interfaces with and without Ultraviolet Treatment
|
Lin, Yow-Jon; Chin, Yi-Min; Lin, Jung-Chung; Su, Yu-Chao |
| 國立彰化師範大學 |
2003-07 |
Band Bending on the Reactive-ion-etched and (NH4)2Sx-treated Mg-doped P-GaN Surface
|
Lin, Yow-Jon; Hsu, C. W. ; Ker, Q. ; Li, Z. D. |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Band calculation of lonsdaleite Ge
|
Chen P.-S;Fan S.-T;Lan H.-S;Liu C.W.; Chen P.-S; Fan S.-T; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 國立交通大學 |
2014-12-08T15:05:36Z |
BAND DISCONTINUITIES - A SIMPLE ELECTROCHEMICAL APPROACH
|
CHANG, KM |
| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Band discontinuity in InAsPSb alloy system
|
C. Y. Tsai;W. C. Chen;P. H. Chang;C. I. Wu;H. H. Lin; C. Y. Tsai; W. C. Chen; P. H. Chang; C. I. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:14Z |
Band Edge Diagram Construction for the Design of Photonic Crystal Fibers Composed of Materials with Arbitrary Anisotropy
|
S. M. Hsu; H. C. Chang; HUNG-CHUN CHANG |
| 臺大學術典藏 |
2022-08-09T03:50:21Z |
Band Edge Tailoring in Few-Layer Two-Dimensional Molybdenum Sulfide/Selenide Alloys
|
Lin Y.-R.; Cheng W.-H.; Richter M.H.; Duchene J.S.; Peterson E.A.; Went C.M.; Al Balushi Z.Y.; Jariwala D.; Neaton J.B.; Chen L.-C.; Atwater H.A.; Lin Y.-R.; Chen L.-C.; LI-CHYONG CHEN |
| 國立成功大學 |
2015-01 |
Band engineering magneto-resistance effect in Co:a-C films
|
Chuang, P. Y.; Huang, J. C. A.; Lu, P. E.; Hsu, H. S.; Sun, S. J.; Yang, Y. W.; Chen, J. M.; Lee, C. H. |
| 國立中山大學 |
1997-07-20 |
Band engineering of ZnSe/ZnCdSe Quantum wells for the application of Blue-Green Laser
|
Ikai Lo;S.J. Chen;W.C. Wu;L.W. Tu;W.C. Hsu;Y.C. Lee;R.C. Tu;Y.K. Su |
| 國立交通大學 |
2016-03-28T00:04:27Z |
Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure
|
Wang, Pei-Yu; Tsui, Bing-Yue |
| 國立交通大學 |
2017-04-21T06:55:47Z |
Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure
|
Wang, Pei-Yu; Tsui, Bing-Yue |
