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顯示項目 303751-303775 / 2347236 (共93890頁)
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| 國立暨南國際大學 |
2003 |
DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs?
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林佑昇; Lin, YS |
| 臺大學術典藏 |
2018-09-10T09:25:18Z |
DC and RF Characteristics of Ga2O3/GaN Single Nanowire MOSFET
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P. Yeh; Y. Wu; L. Peng; LUNG-HAN PENG; C. Li; J. Yu;C. Li;P. Yeh;Y. Wu;L. Peng; J. Yu |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Dc and rf characteristics of self-aligned inversion-channel In 0.53 Ga0.47 As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2 O3 / Ga 2 O3 (Gd2 O3) as gate dielectrics
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Lin, T.D.;Chang, P.;Chiu, H.C.;Hong, M.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.; Lin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, TD;Chang, P;Chiu, HC;Hong, M;Kwo, J;Lin, YS;Hsu, Shawn SH; Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, Shawn SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, T;Chang, P;Chiu, H;Hong, M;Kwo, J;Lin, Y;Hsu, S; Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:37:07Z |
DC and RF characteristics of submicron gate FET's formed by micromachined V-groove technology
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Ho, Nien-Show; Lu, Shey-Shi; SHEY-SHI LU |
| 國立高雄師範大學 |
2010 |
DC and RF Degradation Induced by High RF Power Stresses in 0.18μm nMOSFETs
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Ruey-Lue Wang;Chien-Hsuan Liu;Yan-Kuin Su;Chih-Ho Tu;Ying-Zong Juang; 王瑞祿 |
| 國立交通大學 |
2014-12-08T15:07:59Z |
DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source-Drain Spacing Technology
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Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Wu, Chien-Ying; Chen, Yu-Lin; Hsiao, Yu-Lin |
| 元智大學 |
2010-01 |
DC and RF performance improvement of 70nm quantum well field effect transistor by narrowing source - drain spacing technology
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許恒通; Chien-I Kuo; Edward Yi Chang; Yasuyuki Miyamoto; Chien-Ying Wu; Yu-Lin Chen; Yu-Lin Hsiao |
| 國立交通大學 |
2014-12-08T15:09:42Z |
DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit
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Li, Yiming; Hwang, Chih-Hong |
| 臺大學術典藏 |
2018-09-10T07:03:53Z |
DC bus regulation strategy for grid-connected PV power generation system
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Chen, Y.-M.;Wu, H.-C.;Chen, Y.-C.; Chen, Y.-M.; Wu, H.-C.; Chen, Y.-C.; YAOW-MING CHEN |
| 國立臺灣科技大學 |
2009-11-02 |
DC Characteristic Analysis of Three-Phase LC Filter- Uncontrolled Rectifier Using Circuit DQ Transfomation
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Zhang Zhe-Min;Yang Xi-Jun;Yao Su-Yi;Yang Xing-Hua |
| 臺大學術典藏 |
2018-09-10T07:09:09Z |
DC characteristic and high frequency response of GaN Nanowire Metal-Oxide-Semiconductor Field-effect Transistor
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J.-W. Yu; H.-M. Wu; B.-C. Yeh; L.-H. Peng; LUNG-HAN PENG |
| 臺大學術典藏 |
2009 |
DC characteristics and high frequency response from GaN nanowire metal-oxide-semiconductor field-effect transistor
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Yu, Jeng-Wei; Wu, Han-Min; Yeh, Bo-Chun; Peng, Lung-Han; Yu, Jeng-Wei; Wu, Han-Min; Yeh, Bo-Chun; Peng, Lung-Han |
| 國立臺灣大學 |
2009 |
DC characteristics and high frequency response from GaN nanowire metal-oxide-semiconductor field-effect transistor
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Yu, Jeng-Wei; Wu, Han-Min; Yeh, Bo-Chun; Peng, Lung-Han |
| 國立成功大學 |
2007-01 |
DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD
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Cheng, A. T.; Su, Yan-Kuin; Lai, W. C.; Huang, C. H. |
| 國立臺灣大學 |
1993-04 |
DC characteristics of In0.52Al0.48As/ In0.53(AxGa1-x)0.47As NPN double heterojunction bipolar transistors
|
Huang, C.-H.; Lee, T.-L.; Lin, H.-H. |
| 臺大學術典藏 |
1993 |
DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors
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Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung; Huang, Chang-Hsiu |
| 國立臺灣大學 |
1993 |
DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors
|
Huang, Chang-Hsiu; Lee, T. L.; 林浩雄; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung |
| 國立交通大學 |
2014-12-08T15:38:25Z |
DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
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Chen, Shu-Han; Chang, Chao-Min; Chiang, Pei-Yi; Wang, Sheng-Yu; Chang, Wen-Hao; Chyi, Jen-Inn |
| 國立成功大學 |
2003-04 |
Dc characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
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Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Liu, Rong-Chau; Yen, Chih-Hung; Chen, Jing-Yuh; Cheng, Chin-Chuan;; Liu, Wen-Chau |
| 國立臺灣大學 |
1992-04 |
DC characterization of GaInP/GaAs tunneling emitter bipolar transistors
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Lu, S.S.; Wu, C.C.; Huang, C.C.; Williamson, F.; Nathan, M.I. |
| 國立成功大學 |
2005-02 |
DC characterization of InP/InGaAs tunneling emitter bipolar transistor
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Fu, Ssu-I; Lai, Po-Hsien; Tsai, Yan-Ying; Liu, Wen-Chau |
| 臺大學術典藏 |
2018-09-10T04:12:58Z |
Dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor
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Nathan, M.I.; Williamson, F.; Huang, C.C.; Wu, C.C.; Lu, S.S.; Lu, S.S. |
| 國立臺灣大學 |
1992 |
Dc characterization of the Ga[sub 0.51]In[sub 0.49]P/GaAs tunneling emitter bipolar transistor
|
Lu, S.S.; Wu, C.C. |
顯示項目 303751-303775 / 2347236 (共93890頁)
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