| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La ; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La ; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jul-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jun-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 元智大學 |
Jun-20 |
DC - DC converters design using a type-2 wavelet fuzzy cerebellar model articulation controller
|
Chih-Min Lin; Van-Hoa La; Tien-Loc Le |
| 國立成功大學 |
2006-02 |
DC and 1/f noise characteristics of InGaP/InGaAsN/GaAs double heterojunction bipolar transistors
|
Su, Yan-Kuin; Hsu, S. H.; Sio, C. C.; Chen, W. C.; Chang, Shoou-Jinn |
| 實踐大學 |
2009 |
DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing technique
|
Lin, H.Y.;Wu, S.L.;Chang, S.J.;Kuo, C.W.;Wang, Y.P.;Hung, S.C. |
| 國立成功大學 |
2009-08 |
DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing technique
|
Lin, Hau Yu; Wu, San Lein; Chang, Shoou Jinn; Kuo, Cheng Wen; Wang, Yen Ping; Hung, Shang Chao |
| 國立臺灣大學 |
2011 |
DC and AC Gate-Bias Stability of Nanocrystalline Silicon Thin-Film Transistors Made on Colorless Polyimide Foil Substrates
|
Chiu, I-Chung; Cheng, I-Chun; Chen, Jian Z.; Huang, Jung-Jie; Chen, Yung-Pei |
| 臺大學術典藏 |
2021-08-05T02:39:47Z |
DC and AC magnetic fields increase neurite outgrowth of SH-SY5Y neuroblastoma cells with and without retinoic acid
|
Mahmood Alabed E.A;Engel M;Yamauchi Y;Hossain M.S.A;Ooi L.; Mahmood Alabed E.A; Engel M; Yamauchi Y; Hossain M.S.A; Ooi L.; KEVIN CHIA-WEN WU |
| 國立交通大學 |
2014-12-08T15:25:06Z |
DC and AC NBTI stresses in pMOSFETs with PE-SiN capping
|
Lu, Chia-Yu; Lin, Horng-Chih; Chang, Yi-Feng; Huang, Tiao-Yuan |
| 國立交通大學 |
2019-10-05T00:09:47Z |
DC and dynamic switching characteristics of field-plated vertical geometry beta-Ga2O3 rectifiers
|
Yang, Jiancheng; Carey, Patrick; Ren, Fan; Chen, Yen-Ting; Liao, Y.; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko; Pearton, S. J.; Smith, David J.; Kuramata, Akito |
| 國立交通大學 |
2019-05-02T00:25:49Z |
DC and high-frequency characteristics of trigate polycrystalline-silicon thin-film transistors with different layout geometries
|
Chen, Bo-Yuan; Chen, Kun-Ming; Shiao, Yu-Shao Jerry; Lin, Chuang-Ju; Huang, Guo-Wei; Chen, Hsiu-Chih; Hsueh, Fu-Kuo; Shen, Chang-Hong; Shieh, Jia-Min; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:13:45Z |
DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx
|
Shiu, J. Y.; Desmaris, V.; Rorsman, N.; Kumakura, K.; Makimoto, T.; Zirath, H.; Chang, E. Y. |
| 南台科技大學 |
2004 |
DC and Noise Characteristics of 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors
|
Y. Z. Chiou |
| 南台科技大學 |
2004 |
DC and Noise Characteristics of 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors
|
Y. Z. Chiou; Y. K. Su |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer
|
Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, KK;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 國立臺灣大學 |
2003 |
DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs
|
Tu, Hsing-Yuan; Chou, Tao-Hsuan; Lin, Yo-Sheng; Chiu, Hsien-Chin; Chen, Ping-Yu; Wu, Wen-Chung; Lu, Shey-Shi |
| 國立暨南國際大學 |
2003 |
DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs?
|
林佑昇; Lin, YS |
| 臺大學術典藏 |
2018-09-10T09:25:18Z |
DC and RF Characteristics of Ga2O3/GaN Single Nanowire MOSFET
|
P. Yeh; Y. Wu; L. Peng; LUNG-HAN PENG; C. Li; J. Yu;C. Li;P. Yeh;Y. Wu;L. Peng; J. Yu |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Dc and rf characteristics of self-aligned inversion-channel In 0.53 Ga0.47 As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2 O3 / Ga 2 O3 (Gd2 O3) as gate dielectrics
|
Lin, T.D.;Chang, P.;Chiu, H.C.;Hong, M.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.; Lin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
|
Lin, TD;Chang, P;Chiu, HC;Hong, M;Kwo, J;Lin, YS;Hsu, Shawn SH; Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, Shawn SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
|
Lin, T;Chang, P;Chiu, H;Hong, M;Kwo, J;Lin, Y;Hsu, S; Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:37:07Z |
DC and RF characteristics of submicron gate FET's formed by micromachined V-groove technology
|
Ho, Nien-Show; Lu, Shey-Shi; SHEY-SHI LU |
| 國立高雄師範大學 |
2010 |
DC and RF Degradation Induced by High RF Power Stresses in 0.18μm nMOSFETs
|
Ruey-Lue Wang;Chien-Hsuan Liu;Yan-Kuin Su;Chih-Ho Tu;Ying-Zong Juang; 王瑞祿 |
| 國立交通大學 |
2014-12-08T15:07:59Z |
DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source-Drain Spacing Technology
|
Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Wu, Chien-Ying; Chen, Yu-Lin; Hsiao, Yu-Lin |
| 元智大學 |
2010-01 |
DC and RF performance improvement of 70nm quantum well field effect transistor by narrowing source - drain spacing technology
|
許恒通; Chien-I Kuo; Edward Yi Chang; Yasuyuki Miyamoto; Chien-Ying Wu; Yu-Lin Chen; Yu-Lin Hsiao |
| 國立交通大學 |
2014-12-08T15:09:42Z |
DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit
|
Li, Yiming; Hwang, Chih-Hong |
| 臺大學術典藏 |
2018-09-10T07:03:53Z |
DC bus regulation strategy for grid-connected PV power generation system
|
Chen, Y.-M.;Wu, H.-C.;Chen, Y.-C.; Chen, Y.-M.; Wu, H.-C.; Chen, Y.-C.; YAOW-MING CHEN |
| 國立臺灣科技大學 |
2009-11-02 |
DC Characteristic Analysis of Three-Phase LC Filter- Uncontrolled Rectifier Using Circuit DQ Transfomation
|
Zhang Zhe-Min;Yang Xi-Jun;Yao Su-Yi;Yang Xing-Hua |
| 臺大學術典藏 |
2018-09-10T07:09:09Z |
DC characteristic and high frequency response of GaN Nanowire Metal-Oxide-Semiconductor Field-effect Transistor
|
J.-W. Yu; H.-M. Wu; B.-C. Yeh; L.-H. Peng; LUNG-HAN PENG |
| 臺大學術典藏 |
2009 |
DC characteristics and high frequency response from GaN nanowire metal-oxide-semiconductor field-effect transistor
|
Yu, Jeng-Wei; Wu, Han-Min; Yeh, Bo-Chun; Peng, Lung-Han; Yu, Jeng-Wei; Wu, Han-Min; Yeh, Bo-Chun; Peng, Lung-Han |
| 國立臺灣大學 |
2009 |
DC characteristics and high frequency response from GaN nanowire metal-oxide-semiconductor field-effect transistor
|
Yu, Jeng-Wei; Wu, Han-Min; Yeh, Bo-Chun; Peng, Lung-Han |
| 國立成功大學 |
2007-01 |
DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD
|
Cheng, A. T.; Su, Yan-Kuin; Lai, W. C.; Huang, C. H. |
| 國立臺灣大學 |
1993-04 |
DC characteristics of In0.52Al0.48As/ In0.53(AxGa1-x)0.47As NPN double heterojunction bipolar transistors
|
Huang, C.-H.; Lee, T.-L.; Lin, H.-H. |
| 臺大學術典藏 |
1993 |
DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors
|
Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung; Huang, Chang-Hsiu |
| 國立臺灣大學 |
1993 |
DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors
|
Huang, Chang-Hsiu; Lee, T. L.; 林浩雄; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung |
| 國立交通大學 |
2014-12-08T15:38:25Z |
DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
|
Chen, Shu-Han; Chang, Chao-Min; Chiang, Pei-Yi; Wang, Sheng-Yu; Chang, Wen-Hao; Chyi, Jen-Inn |
| 國立成功大學 |
2003-04 |
Dc characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
|
Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Liu, Rong-Chau; Yen, Chih-Hung; Chen, Jing-Yuh; Cheng, Chin-Chuan;; Liu, Wen-Chau |
