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顯示項目 303901-303910 / 2348439 (共234844頁)
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| 南台科技大學 |
2004 |
DC and Noise Characteristics of 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors
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Y. Z. Chiou |
| 南台科技大學 |
2004 |
DC and Noise Characteristics of 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors
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Y. Z. Chiou; Y. K. Su |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, KK;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 國立臺灣大學 |
2003 |
DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs
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Tu, Hsing-Yuan; Chou, Tao-Hsuan; Lin, Yo-Sheng; Chiu, Hsien-Chin; Chen, Ping-Yu; Wu, Wen-Chung; Lu, Shey-Shi |
| 國立暨南國際大學 |
2003 |
DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs?
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林佑昇; Lin, YS |
| 臺大學術典藏 |
2018-09-10T09:25:18Z |
DC and RF Characteristics of Ga2O3/GaN Single Nanowire MOSFET
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P. Yeh; Y. Wu; L. Peng; LUNG-HAN PENG; C. Li; J. Yu;C. Li;P. Yeh;Y. Wu;L. Peng; J. Yu |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Dc and rf characteristics of self-aligned inversion-channel In 0.53 Ga0.47 As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2 O3 / Ga 2 O3 (Gd2 O3) as gate dielectrics
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Lin, T.D.;Chang, P.;Chiu, H.C.;Hong, M.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.; Lin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:52Z |
dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, TD;Chang, P;Chiu, HC;Hong, M;Kwo, J;Lin, YS;Hsu, Shawn SH; Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, Shawn SH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:50Z |
DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
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Lin, T;Chang, P;Chiu, H;Hong, M;Kwo, J;Lin, Y;Hsu, S; Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:37:07Z |
DC and RF characteristics of submicron gate FET's formed by micromachined V-groove technology
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Ho, Nien-Show; Lu, Shey-Shi; SHEY-SHI LU |
顯示項目 303901-303910 / 2348439 (共234844頁)
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