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顯示項目 306546-306555 / 2348719 (共234872頁)
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| 國立交通大學 |
2001-09-15 |
Defect Auger exciton dissociation and impact ionization in conjugated polymers
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Chen, CH; Meng, HF |
| 國立成功大學 |
2021-04-1 |
Defect characterization by differential capacitance spectroscopy without the Arrhenius plot
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Li;Jian, V. |
| 國立彰化師範大學 |
1993 |
Defect Characterization Using Non-Equilibrium Behavior of Quantum Wires
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Smith, D. D. ; Wybourne, M. N. ; Wu, Jong-Ching; DeAnni, A. ; Moerkirk, R. P. ; LeMeune, Jr. M. L. ; Fotiadis, L. ; Chang, W. H. |
| 國立成功大學 |
2021-02-11 |
Defect Characterization Using Raw Admittance Spectroscopy
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Li;Jian;V |
| 國立中山大學 |
1998 |
Defect Clusters and Superstructures of Zr4+ Dissolved Ni1-xO
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J. Chen;P. Shen |
| 國立高雄師範大學 |
1989 |
Defect density and the corresponding Activation Energy in Amorphous Dielectric thin films
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林財庫; Tsair-Kuh Lin |
| 中華大學 |
2009 |
Defect Density Extraction of high-κ Dielectric Gate Stack by Combining Charge Pumping and Low Frequency Measurement
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吳建宏; rossiwu |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation
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Merckling, C;Chang, YC;Lu, CY;Penaud, J;Brammertz, G;Scarrozza, M;Pourtois, G;Kwo, J;Hong, M;Dekoster, J;others; Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; Hong, M; Dekoster, J; others; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:26:43Z |
Defect density reduction of the Al(2)O(3)/GaAs(001) interface by using H(2)S molecular beam passivation
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. |
| 國立交通大學 |
2019-04-02T05:58:57Z |
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. |
顯示項目 306546-306555 / 2348719 (共234872頁)
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