| 國立中山大學 |
2006 |
GaN nanorod assemblies on self-implanted (111) Si substrates
|
H.W. Seo;Q.Y. Chen;L.W. Tu;C.L. Hsiao;Y.J. Tu;X.M. Wang;O. Lazano;W.K. Chu |
| 國立臺灣大學 |
2008 |
GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength
|
Wang, Cheng-Yin; Chen, Liang-Yi; Chen, Cheng-Pin; Cheng, Yun-Wei; Ke, Min-Yung; Hsieh, Min-Yann; Wu, Han-Ming; Peng, Lung-Han; Huang, JianJang |
| 臺大學術典藏 |
2018-09-10T07:03:25Z |
GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength
|
Yun-Wei Cheng; Min-Yung Ke; Min-Yann Hsieh; Han-Ming Wu; Lung-Han Peng; JianJang Huang; JIAN-JANG HUANG; LUNG-HAN PENG; Cheng-Yin Wang;Liang-Yi Chen;Cheng-Pin Chen;Yun-Wei Cheng;Min-Yung Ke;Min-Yann Hsieh;Han-Ming Wu;Lung-Han Peng;JianJang Huang; Cheng-Yin Wang; Liang-Yi Chen; Cheng-Pin Chen |
| 國立成功大學 |
2013-04 |
GaN Nanowire Field Emitters With the Adsorption of Au Nanoparticles
|
Tsai, Tsung-Ying; Chang, Shoou-Jinn; Weng, Wen-Yin; Li, Shuguang; Liu, Shin; Hsu, Cheng-Liang; Hsueh, Han-Ting; Hsueh, Ting-Jen |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy
|
Lee, WC;Lee, YJ;Kwo, J;Hsu, CH;Lee, CH;Wu, SY;Ng, HM;Hong, M; Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:37Z |
GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy
|
Lee, W.C.;Lee, Y.J.;Kwo, J.;Hsu, C.H.;Lee, C.H.;Wu, S.Y.;Ng, H.M.;Hong, M.; Lee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; Hong, M.; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:12:23Z |
GaN p-i-n photodetectors with an LT-GaN interlayer
|
Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C. |
| 國立成功大學 |
2008-04 |
GaN p-i-n photodetectors with an LT-GaN interlayer
|
Lin, J. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C. |
| 國立成功大學 |
2002-12 |
GaN p-n junction diode formed by Si ion implantation into p-GaN
|
Lee, M. L.; Sheu, Jinn-Kong; Yeh, L. S.; Tsai, M. S.; Kao, C. J.; Tun, Chun-Ju; Chang, Shoou-Jinn; Chi, Gou-Chung |
| 南台科技大學 |
2004 |
GaN Photodetectors with Transparent Indium Tin Oxide Electrodes
|
唐經洲; Jing-Jou Tang;邱裕中; Yu-Zung Chiou |
| 南台科技大學 |
2004-03 |
GaN Photodetectors with Transparent Indium Tin Oxide Electrodes
|
Yu-Zung Chiou; Jing-Jou Tang |
| 臺大學術典藏 |
2018-09-10T08:17:45Z |
GaN Photonic Crystal Membrane Laser
|
Cheng-Hung Lin,;Jyh-Yang Wang,;Cheng-Yen Chen,;Kun-Ching Shen,;Dong-Ming Yeh,;Yean-Woei Kiang,;C. C. Yang,; Cheng-Hung Lin,; Jyh-Yang Wang,; Cheng-Yen Chen,; Kun-Ching Shen,; Dong-Ming Yeh,; Yean-Woei Kiang,; C. C. Yang,; YEAN-WOEI KIANG |
| 南台科技大學 |
2002 |
GaN p–n junction diode formed by Si ion implantation into p-GaN
|
李明倫; M. L. Lee; J. K. Sheu; L. S. Yeh; M. S. Tsai; C. J. Kao; C. J. Tun; S. J. Chang; G. C. Chi |
| 國立交通大學 |
2018-08-21T05:53:05Z |
GaN Schottky Barrier Diodes on Free-Standing GaN Wafer
|
Liu, Xinke; Gu, Hong; Li, Kuilong; Wang, Jianfeng; Wang, Lei; Kuo, Hao-Chung; Liu, Wenjun; Chen, Lin; Fang, Jianping; Liu, Meihua; Lin, Xinnan; Xu, Ke; Ao, Jin-Ping |
| 國立臺灣科技大學 |
2010 |
GaN schottky barrier photodetectors prepared on patterned sapphire substrate
|
Chang S.J.; Wang S.M.; Chen T.P.; Young S.J.; Lin Y.C.; Wu S.L.; Huang B.R. |
| 國立成功大學 |
2012-11 |
GaN Schottky Barrier Photodetectors with a beta-Ga2O3 Cap Layer
|
Huang, Zhen-Da; Chuang, Ricky Wenkuei; Weng, Wen-Yin; Chang, Shoou-Jinn; Chiu, Chiu-Jung; Wu, San-Lein |
| 國立成功大學 |
2011-11 |
GaN Schottky barrier photodetectors with a lattice matched Al0.82In0.18N intermediate layer
|
Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Jung, S.-C.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S.-L. |
| 實踐大學 |
2011 |
GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer
|
Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 實踐大學 |
2011 |
GaN Schottky Barrier Photodetectors With a Lattice-Matched Al0.82In0.18N Intermediate Layer
|
Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 南台科技大學 |
2003 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
李明倫; M. L. Lee; J. K. Sheu; W. C. Lai; S. J. Chang; Y. K. Su; M. G. Chen; C. J. Kao; J. M. Tsai; G. C. Chi |
| 南台科技大學 |
2003 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
李明倫; M. L. Lee; J. K. Sheu; C. J. Kao; M. C. Chen; C. J. Tun; W. C. Lai; Y. K. Su; S.J. Chang; G. C. Chi |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2007-09-03 |
GaN Schottky barrier photodetectors with SiN/GaN nucleation layer
|
Jhou, Y. D.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Y. Y.; Liu, C. H.; Lee, H. C. |
| 臺大學術典藏 |
2021-02-26T08:43:37Z |
GaN Schottky contact on the Pattern Sapphire Substrate with Reducted threading dislocation
|
Lee, C.-C.; Chien, C.-Y.; Cheng, W.I.; Yen, C.-W.; Hu, P.-Y.; Kuan, C.-H.; CHIEH-HSIUNG KUAN |
| 國立成功大學 |
2012 |
GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer
|
Chang, Sheng-Po |
| 國立成功大學 |
2008-03-31 |
GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts
|
Chang, Ping-Chuan; Yu, Chia-Lin; Chang, Shoou-Jinn; Liu, C. H. |
| 國立高雄師範大學 |
2009 |
GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration
|
Jung-Hui Tsai;Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Hsuan-Wei Huang;Wen-Shiung Lour; 蔡榮輝 |
| 國立臺灣海洋大學 |
2009 |
GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration
|
Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Hsuan-Wei Huang;Jung-Hui Tsai;Wen-Shiung Lour |
| 國立臺灣海洋大學 |
2009 |
GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration
|
Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Hsuan-Wei Huang;Jung-Hui Tsai;Wen-Shiung Lour |
| 國立臺灣海洋大學 |
2009-03 |
GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration
|
W.S. Lour*; J.H. Tsai; H.W. Huang; K.P. Liu; T.H. Huang; K.C. Liang; S.Y. Chiu |
| 國立臺灣海洋大學 |
2009 |
GaN Sensors with Metal–Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration
|
Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang; Kang-Ping Liu;Hsuan-Wei Huang;Jung-Hui Tsai;Wen-Shiung Lour |
| 國立成功大學 |
2017-10 |
GaN Submicron Rods on Graphene for Nonenzymatic Amperometric Sensing of Glucose
|
Huang;Shyh-Jer;Chang;Shen-Po;Chuang;Ricky, W.;Lai;Jian-Ting;Su;Yan-Kuin;Liu;Chih-Yi;Wang;Zi-Hao;Ruan;Jian-Long;Lin;Cheng-Chung |
| 國立交通大學 |
2014-12-08T15:07:41Z |
GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes
|
Lai, Chun-Feng; Chao, Chia-Hsin; Kuo, Hao-Chung; Yu, Peichen; Yen, His-Hsuan; Yeh, Wen-Yung |
| 臺大學術典藏 |
2018-09-10T09:47:47Z |
GaN thin films via pulsed laser deposition with ZnO buffer layer by hydrothermal method
|
Wu, H.-Y.;Cheng, Y.-W.;Lin, C.-F.; Wu, H.-Y.; Cheng, Y.-W.; Lin, C.-F.; CHING-FUH LIN |
| 國立成功大學 |
2007 |
GaN ultraviolet photodetector with a low-temperature AlN cap layer
|
Chang, Shoou-Jinn; Yu, C. L.; Chang, Ping-Chuan; Lin, Y. C. |
| 南台科技大學 |
2005-08 |
GaN Ultraviolet Photodetectors with Transparent Titanium Tungsten and Tungsten Electrodes
|
Y. Z. Chiou |
| 國立成功大學 |
2008-09-15 |
GaN UV MSM photodetector on porous beta-SiC/(111)Si substrates
|
Chang, Shiuan-Ho; Fang, Yean-Kuen; Hsu, Kai-Chun; Wei, Tzu-Chieh |
| 國立交通大學 |
2019-04-02T06:04:31Z |
GaN vertical-cavity surface-emitting laser with a high-contrast grating reflector
|
Chang, Tsu-Chi; Kuo, Shuo-Yi; Hashemi, Ehsan; Haglund, Asa; Lu, Tien-Chang |
| 國立成功大學 |
2000 |
GaN 光電及微波元件之研製-子計劃四:GaN-Based 微波功率元件之研製及相關製程技術之研發(II)
|
王永和 |
| 國立成功大學 |
2000 |
GaN 光電及微波元件之研製-子計劃四：GaN-Based 微波功率元件之研製及相關製程技術之研發(I)
|
王永和 |
| 國立成功大學 |
2004 |
GaN 量子點其光電特性之研究
|
田興龍 |
| 國立臺灣大學 |
2008-01 |
GaN, ZnO and InN Nanowires and Devices
|
Pearton, S. J.; Kang, B. S.; Gila, B. P.; Norton, D. P.; Kryliouk, O.; Ren, F.; Heo, Young-Woo; Chang, Chih-Yang; Chi, Gou-Chung; Wang, Li-Chyong; Chen, Wei-Ming |
| 國立成功大學 |
2017 |
GaN-based blue light-emitting diodes with an electron transmission layer
|
Jheng, Jheng J.S.;Wang, C.K.;Chiou, Y.Z.;Chang, S.P.;Chang, S.J. |
| 國立成功大學 |
2022 |
GAN-Based Criminal Suspect Face Generator
|
Yang, S.;Zhang, J.-T.;Lin, C.-W.;Hsu, C.-C. |
| 國立成功大學 |
2017 |
GaN-based cyan light-emitting diode with up to 1-GHz bandwidth for high-speed transmission over SI-POF
|
Vinogradov, J.;Kruglov, R.;Engelbrecht, R.;Ziemann, O.;Sheu, J.-K.;Chi, K.-L.;Wun, J.-M.;Shi, J.-W. |
| 臺大學術典藏 |
2022-02-21T23:30:46Z |
GAN-based Cyclostationary Noise Generator for Narrowband Powerline Communication Systems
|
Chien, Ying Ren; Peng, You Jie; HEN-WAI TSAO |
| 國立成功大學 |
2013-09 |
GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities
|
Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong |
| 臺大學術典藏 |
2018-09-10T09:43:44Z |
GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities
|
Chi, Kai-Lun;Yeh, Shu-Ting;Yeh, Yu-Hsiang;Lin, Kun-Yan;Shi, Jin-Wei;Wu, Yuh-Renn;Lee, Ming Lun;Sheu, Jinn-Kong; Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong; YUH-RENN WU |
| 國立成功大學 |
2016-02 |
GaN-Based Dual-Color Light-Emitting Diodes With a Hybrid Tunnel Junction Structure
|
Lin, Wei-Heng; Chang, Shoou-Jinn; Chen, Wei-Shou |
| 國立成功大學 |
2015-08 |
GaN-Based Enhancement-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using LiNbO3 Ferroelectric Insulator on Gate-Recessed Structure
|
Lee, Ching-Ting; Yang, Chang-Lin; Tseng, Chun-Yen; Chang, Jhe-Hao; Horng, Ray-Hua |
