| 實踐大學 |
2011 |
GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer
|
Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 實踐大學 |
2011 |
GaN Schottky Barrier Photodetectors With a Lattice-Matched Al0.82In0.18N Intermediate Layer
|
Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 南台科技大學 |
2003 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
李明倫; M. L. Lee; J. K. Sheu; W. C. Lai; S. J. Chang; Y. K. Su; M. G. Chen; C. J. Kao; J. M. Tsai; G. C. Chi |
| 南台科技大學 |
2003 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
李明倫; M. L. Lee; J. K. Sheu; C. J. Kao; M. C. Chen; C. J. Tun; W. C. Lai; Y. K. Su; S.J. Chang; G. C. Chi |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
|
Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2007-09-03 |
GaN Schottky barrier photodetectors with SiN/GaN nucleation layer
|
Jhou, Y. D.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Y. Y.; Liu, C. H.; Lee, H. C. |
| 臺大學術典藏 |
2021-02-26T08:43:37Z |
GaN Schottky contact on the Pattern Sapphire Substrate with Reducted threading dislocation
|
Lee, C.-C.; Chien, C.-Y.; Cheng, W.I.; Yen, C.-W.; Hu, P.-Y.; Kuan, C.-H.; CHIEH-HSIUNG KUAN |
| 國立成功大學 |
2012 |
GaN Schottky Diode with TiW Electrodes on Silicon Substrate Based on AlN/AlGaN Buffer Layer
|
Chang, Sheng-Po |
| 國立成功大學 |
2008-03-31 |
GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts
|
Chang, Ping-Chuan; Yu, Chia-Lin; Chang, Shoou-Jinn; Liu, C. H. |
| 國立高雄師範大學 |
2009 |
GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration
|
Jung-Hui Tsai;Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Hsuan-Wei Huang;Wen-Shiung Lour; 蔡榮輝 |
| 國立臺灣海洋大學 |
2009 |
GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration
|
Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Hsuan-Wei Huang;Jung-Hui Tsai;Wen-Shiung Lour |
| 國立臺灣海洋大學 |
2009 |
GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration
|
Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Hsuan-Wei Huang;Jung-Hui Tsai;Wen-Shiung Lour |
| 國立臺灣海洋大學 |
2009-03 |
GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration
|
W.S. Lour*; J.H. Tsai; H.W. Huang; K.P. Liu; T.H. Huang; K.C. Liang; S.Y. Chiu |
| 國立臺灣海洋大學 |
2009 |
GaN Sensors with Metal–Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration
|
Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang; Kang-Ping Liu;Hsuan-Wei Huang;Jung-Hui Tsai;Wen-Shiung Lour |
| 國立成功大學 |
2017-10 |
GaN Submicron Rods on Graphene for Nonenzymatic Amperometric Sensing of Glucose
|
Huang;Shyh-Jer;Chang;Shen-Po;Chuang;Ricky, W.;Lai;Jian-Ting;Su;Yan-Kuin;Liu;Chih-Yi;Wang;Zi-Hao;Ruan;Jian-Long;Lin;Cheng-Chung |
| 國立交通大學 |
2014-12-08T15:07:41Z |
GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes
|
Lai, Chun-Feng; Chao, Chia-Hsin; Kuo, Hao-Chung; Yu, Peichen; Yen, His-Hsuan; Yeh, Wen-Yung |
| 臺大學術典藏 |
2018-09-10T09:47:47Z |
GaN thin films via pulsed laser deposition with ZnO buffer layer by hydrothermal method
|
Wu, H.-Y.;Cheng, Y.-W.;Lin, C.-F.; Wu, H.-Y.; Cheng, Y.-W.; Lin, C.-F.; CHING-FUH LIN |
| 國立成功大學 |
2007 |
GaN ultraviolet photodetector with a low-temperature AlN cap layer
|
Chang, Shoou-Jinn; Yu, C. L.; Chang, Ping-Chuan; Lin, Y. C. |
| 南台科技大學 |
2005-08 |
GaN Ultraviolet Photodetectors with Transparent Titanium Tungsten and Tungsten Electrodes
|
Y. Z. Chiou |
| 國立成功大學 |
2008-09-15 |
GaN UV MSM photodetector on porous beta-SiC/(111)Si substrates
|
Chang, Shiuan-Ho; Fang, Yean-Kuen; Hsu, Kai-Chun; Wei, Tzu-Chieh |
| 國立交通大學 |
2019-04-02T06:04:31Z |
GaN vertical-cavity surface-emitting laser with a high-contrast grating reflector
|
Chang, Tsu-Chi; Kuo, Shuo-Yi; Hashemi, Ehsan; Haglund, Asa; Lu, Tien-Chang |
| 國立成功大學 |
2000 |
GaN 光電及微波元件之研製-子計劃四:GaN-Based 微波功率元件之研製及相關製程技術之研發(II)
|
王永和 |
| 國立成功大學 |
2000 |
GaN 光電及微波元件之研製-子計劃四：GaN-Based 微波功率元件之研製及相關製程技術之研發(I)
|
王永和 |
| 國立成功大學 |
2004 |
GaN 量子點其光電特性之研究
|
田興龍 |
| 國立臺灣大學 |
2008-01 |
GaN, ZnO and InN Nanowires and Devices
|
Pearton, S. J.; Kang, B. S.; Gila, B. P.; Norton, D. P.; Kryliouk, O.; Ren, F.; Heo, Young-Woo; Chang, Chih-Yang; Chi, Gou-Chung; Wang, Li-Chyong; Chen, Wei-Ming |
| 國立成功大學 |
2017 |
GaN-based blue light-emitting diodes with an electron transmission layer
|
Jheng, Jheng J.S.;Wang, C.K.;Chiou, Y.Z.;Chang, S.P.;Chang, S.J. |
| 國立成功大學 |
2022 |
GAN-Based Criminal Suspect Face Generator
|
Yang, S.;Zhang, J.-T.;Lin, C.-W.;Hsu, C.-C. |
| 國立成功大學 |
2017 |
GaN-based cyan light-emitting diode with up to 1-GHz bandwidth for high-speed transmission over SI-POF
|
Vinogradov, J.;Kruglov, R.;Engelbrecht, R.;Ziemann, O.;Sheu, J.-K.;Chi, K.-L.;Wun, J.-M.;Shi, J.-W. |
| 臺大學術典藏 |
2022-02-21T23:30:46Z |
GAN-based Cyclostationary Noise Generator for Narrowband Powerline Communication Systems
|
Chien, Ying Ren; Peng, You Jie; HEN-WAI TSAO |
| 國立成功大學 |
2013-09 |
GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities
|
Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong |
| 臺大學術典藏 |
2018-09-10T09:43:44Z |
GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities
|
Chi, Kai-Lun;Yeh, Shu-Ting;Yeh, Yu-Hsiang;Lin, Kun-Yan;Shi, Jin-Wei;Wu, Yuh-Renn;Lee, Ming Lun;Sheu, Jinn-Kong; Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong; YUH-RENN WU |
| 國立成功大學 |
2016-02 |
GaN-Based Dual-Color Light-Emitting Diodes With a Hybrid Tunnel Junction Structure
|
Lin, Wei-Heng; Chang, Shoou-Jinn; Chen, Wei-Shou |
| 國立成功大學 |
2015-08 |
GaN-Based Enhancement-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using LiNbO3 Ferroelectric Insulator on Gate-Recessed Structure
|
Lee, Ching-Ting; Yang, Chang-Lin; Tseng, Chun-Yen; Chang, Jhe-Hao; Horng, Ray-Hua |
| 國立交通大學 |
2014-12-08T15:25:07Z |
GaN-based film-transferred light-emitting diodes with photonic crystal
|
Lai, Chun-Feng; Chi, Jim-Yong; Chao, Chia-Hsin; Lee, Chia-En; Kuo, Hao-Chung; Huang, Chen-Yang; Yeh, Wen-Yung; Lu, Tien-Chang |
| 國立成功大學 |
2013-10 |
GaN-Based Green-Light-Emitting Diodes with InN/GaN Growth-Switched InGaN Wells
|
Lai, Wei-Chih; Yen, Cheng-Hsiung; Chang, Shoou-Jinn |
| 國立交通大學 |
2014-12-08T15:29:53Z |
GaN-based high contrast grating surface-emitting lasers
|
Wu, Tzeng-Tsong; Wu, Shu-Hsien; Lu, Tien-Chang; Wang, Shing-Chung |
| 國立交通大學 |
2014-12-08T15:13:18Z |
GaN-based high-Q vertical-cavity light-emitting diodes
|
Lu, Tien-Chang; Kao, Tsung-Ting; Kao, Chih-Chiang; Chu, Jung-Tang; Yeh, Kang-Fan; Lin, Li-Fan; Peng, Yu-Chun; Huang, Hung-Wen; Kuo, Hao-Chung; Wang, Shing-Chung |
| 國立成功大學 |
2015-04 |
GaN-Based High-Voltage Light-Emitting Diodes With SU-8 Passivation
|
Li, Shuguang; Lam, Kin-Tak; Huang, Wei-Chih; Chang, Shoou-Jinn |
| 南台科技大學 |
2007 |
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
|
管鴻; C.H. Kuo; S.J. Chang; H. Kuan |
| 國立成功大學 |
2007-06 |
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
|
Kuo, C. H.; Chang, Shoou-Jinn; Kuan, H. |
| 國立成功大學 |
2009 |
GaN-Based LED with Embedded Microlens-like Structure
|
Lai, Wei-Chih; Peng, Li-Chi; Chang, Ming-Nan; Shei, Shih-Chang; Hsu, Y. P.; Sheu, Jinn-Kong |
| 元智大學 |
2009-12 |
GaN-based LED with High-extraction by Natural Textured Surface
|
賴芳儀; Yao Lung Hsieh; S. Y. Kuo |
| 國立交通大學 |
2014-12-08T15:20:50Z |
GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template
|
Lin, D. W.; Lin, C. C.; Chiu, C. H.; Lee, C. Y.; Yang, Y. Y.; Li, Z. Y.; Lai, W. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C. |
| 國立成功大學 |
2009-07 |
GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ SiH4 Treatment Process During Epitaxial Growth
|
Tsai, C. M.; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Ming-Lun; Chang, Shoou-Jinn; Chang, C. S.; Ko, T. K.; Shen, C. F. |
| 南台科技大學 |
2009 |
GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH4 treatment process during epitaxial growth
|
李明倫; C. M. Tsai; J. K. Sheu; W.C. Lai; M. L. Lee; J. Chang; S. Chang; T. K. Ko; C. F. Shen |
| 臺大學術典藏 |
2018-09-10T08:42:13Z |
GaN-based LEDs surrounded with a two-dimensional nanohole photonic crystal structure for effective laterally guided mode coupling
|
Yun-Wei Cheng; Szu-Chieh Wang; Yu-Feng Yin; Liang-Yu Su; JianJang Huang; JIAN-JANG HUANG |
| 國立成功大學 |
2012-09-15 |
GaN-Based LEDs With a Chirped Multiquantum Barrier Structure
|
Lin, Yu-Yao; Chuang, Ricky W.; Chang, Shoou-Jinn; Li, Shuguang; Jiao, Zhi-Yong; Ko, Tsun-Kai; Hon, S. J.; Liu, C. H. |
| 國立成功大學 |
2011-08 |
GaN-Based LEDs With Air Voids Prepared by Laser Scribing and Chemical Etching
|
Shei, S. C.; Lo, H. M.; Lai, W. C.; Lin, W. C.; Chang, S. J. |
| 國立成功大學 |
2011-09-15 |
GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth
|
Lin, N. M.; Chang, S. J.; Shei, S. C.; Lai, W. C.; Yang, Y. Y.; Lin, W. C.; Lo, H. M. |
| 國立交通大學 |
2014-12-08T15:17:16Z |
GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
|
Lee, YJ; Hwang, JM; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; Lu, TC; Kuo, HC; Wang, SC |
