| 國立交通大學 |
2019-04-02T06:04:31Z |
GaN vertical-cavity surface-emitting laser with a high-contrast grating reflector
|
Chang, Tsu-Chi; Kuo, Shuo-Yi; Hashemi, Ehsan; Haglund, Asa; Lu, Tien-Chang |
| 國立成功大學 |
2000 |
GaN 光電及微波元件之研製-子計劃四:GaN-Based 微波功率元件之研製及相關製程技術之研發(II)
|
王永和 |
| 國立成功大學 |
2000 |
GaN 光電及微波元件之研製-子計劃四：GaN-Based 微波功率元件之研製及相關製程技術之研發(I)
|
王永和 |
| 國立成功大學 |
2004 |
GaN 量子點其光電特性之研究
|
田興龍 |
| 國立臺灣大學 |
2008-01 |
GaN, ZnO and InN Nanowires and Devices
|
Pearton, S. J.; Kang, B. S.; Gila, B. P.; Norton, D. P.; Kryliouk, O.; Ren, F.; Heo, Young-Woo; Chang, Chih-Yang; Chi, Gou-Chung; Wang, Li-Chyong; Chen, Wei-Ming |
| 國立成功大學 |
2017 |
GaN-based blue light-emitting diodes with an electron transmission layer
|
Jheng, Jheng J.S.;Wang, C.K.;Chiou, Y.Z.;Chang, S.P.;Chang, S.J. |
| 國立成功大學 |
2022 |
GAN-Based Criminal Suspect Face Generator
|
Yang, S.;Zhang, J.-T.;Lin, C.-W.;Hsu, C.-C. |
| 國立成功大學 |
2017 |
GaN-based cyan light-emitting diode with up to 1-GHz bandwidth for high-speed transmission over SI-POF
|
Vinogradov, J.;Kruglov, R.;Engelbrecht, R.;Ziemann, O.;Sheu, J.-K.;Chi, K.-L.;Wun, J.-M.;Shi, J.-W. |
| 臺大學術典藏 |
2022-02-21T23:30:46Z |
GAN-based Cyclostationary Noise Generator for Narrowband Powerline Communication Systems
|
Chien, Ying Ren; Peng, You Jie; HEN-WAI TSAO |
| 國立成功大學 |
2013-09 |
GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities
|
Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong |
| 臺大學術典藏 |
2018-09-10T09:43:44Z |
GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities
|
Chi, Kai-Lun;Yeh, Shu-Ting;Yeh, Yu-Hsiang;Lin, Kun-Yan;Shi, Jin-Wei;Wu, Yuh-Renn;Lee, Ming Lun;Sheu, Jinn-Kong; Chi, Kai-Lun; Yeh, Shu-Ting; Yeh, Yu-Hsiang; Lin, Kun-Yan; Shi, Jin-Wei; Wu, Yuh-Renn; Lee, Ming Lun; Sheu, Jinn-Kong; YUH-RENN WU |
| 國立成功大學 |
2016-02 |
GaN-Based Dual-Color Light-Emitting Diodes With a Hybrid Tunnel Junction Structure
|
Lin, Wei-Heng; Chang, Shoou-Jinn; Chen, Wei-Shou |
| 國立成功大學 |
2015-08 |
GaN-Based Enhancement-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using LiNbO3 Ferroelectric Insulator on Gate-Recessed Structure
|
Lee, Ching-Ting; Yang, Chang-Lin; Tseng, Chun-Yen; Chang, Jhe-Hao; Horng, Ray-Hua |
| 國立交通大學 |
2014-12-08T15:25:07Z |
GaN-based film-transferred light-emitting diodes with photonic crystal
|
Lai, Chun-Feng; Chi, Jim-Yong; Chao, Chia-Hsin; Lee, Chia-En; Kuo, Hao-Chung; Huang, Chen-Yang; Yeh, Wen-Yung; Lu, Tien-Chang |
| 國立成功大學 |
2013-10 |
GaN-Based Green-Light-Emitting Diodes with InN/GaN Growth-Switched InGaN Wells
|
Lai, Wei-Chih; Yen, Cheng-Hsiung; Chang, Shoou-Jinn |
| 國立交通大學 |
2014-12-08T15:29:53Z |
GaN-based high contrast grating surface-emitting lasers
|
Wu, Tzeng-Tsong; Wu, Shu-Hsien; Lu, Tien-Chang; Wang, Shing-Chung |
| 國立交通大學 |
2014-12-08T15:13:18Z |
GaN-based high-Q vertical-cavity light-emitting diodes
|
Lu, Tien-Chang; Kao, Tsung-Ting; Kao, Chih-Chiang; Chu, Jung-Tang; Yeh, Kang-Fan; Lin, Li-Fan; Peng, Yu-Chun; Huang, Hung-Wen; Kuo, Hao-Chung; Wang, Shing-Chung |
| 國立成功大學 |
2015-04 |
GaN-Based High-Voltage Light-Emitting Diodes With SU-8 Passivation
|
Li, Shuguang; Lam, Kin-Tak; Huang, Wei-Chih; Chang, Shoou-Jinn |
| 南台科技大學 |
2007 |
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
|
管鴻; C.H. Kuo; S.J. Chang; H. Kuan |
| 國立成功大學 |
2007-06 |
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
|
Kuo, C. H.; Chang, Shoou-Jinn; Kuan, H. |
| 國立成功大學 |
2009 |
GaN-Based LED with Embedded Microlens-like Structure
|
Lai, Wei-Chih; Peng, Li-Chi; Chang, Ming-Nan; Shei, Shih-Chang; Hsu, Y. P.; Sheu, Jinn-Kong |
| 元智大學 |
2009-12 |
GaN-based LED with High-extraction by Natural Textured Surface
|
賴芳儀; Yao Lung Hsieh; S. Y. Kuo |
| 國立交通大學 |
2014-12-08T15:20:50Z |
GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template
|
Lin, D. W.; Lin, C. C.; Chiu, C. H.; Lee, C. Y.; Yang, Y. Y.; Li, Z. Y.; Lai, W. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C. |
| 國立成功大學 |
2009-07 |
GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ SiH4 Treatment Process During Epitaxial Growth
|
Tsai, C. M.; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Ming-Lun; Chang, Shoou-Jinn; Chang, C. S.; Ko, T. K.; Shen, C. F. |
| 南台科技大學 |
2009 |
GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH4 treatment process during epitaxial growth
|
李明倫; C. M. Tsai; J. K. Sheu; W.C. Lai; M. L. Lee; J. Chang; S. Chang; T. K. Ko; C. F. Shen |
| 臺大學術典藏 |
2018-09-10T08:42:13Z |
GaN-based LEDs surrounded with a two-dimensional nanohole photonic crystal structure for effective laterally guided mode coupling
|
Yun-Wei Cheng; Szu-Chieh Wang; Yu-Feng Yin; Liang-Yu Su; JianJang Huang; JIAN-JANG HUANG |
| 國立成功大學 |
2012-09-15 |
GaN-Based LEDs With a Chirped Multiquantum Barrier Structure
|
Lin, Yu-Yao; Chuang, Ricky W.; Chang, Shoou-Jinn; Li, Shuguang; Jiao, Zhi-Yong; Ko, Tsun-Kai; Hon, S. J.; Liu, C. H. |
| 國立成功大學 |
2011-08 |
GaN-Based LEDs With Air Voids Prepared by Laser Scribing and Chemical Etching
|
Shei, S. C.; Lo, H. M.; Lai, W. C.; Lin, W. C.; Chang, S. J. |
| 國立成功大學 |
2011-09-15 |
GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth
|
Lin, N. M.; Chang, S. J.; Shei, S. C.; Lai, W. C.; Yang, Y. Y.; Lin, W. C.; Lo, H. M. |
| 國立交通大學 |
2014-12-08T15:17:16Z |
GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
|
Lee, YJ; Hwang, JM; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; Lu, TC; Kuo, HC; Wang, SC |
| 國立成功大學 |
2013-01-01 |
GaN-Based LEDs With an HT-AlN Nucleation Layer Prepared on Patterned Sapphire Substrate
|
Chang, Chung-Ying; Chang, Shoou-Jinn; Liu, C. H.; Li, Shuguang; Chen, Evan |
| 國立成功大學 |
2012-02 |
GaN-based LEDs with Ar plasma treatment
|
Kuo, D. S.; Lam, K. T.; Wen, K. H.; Chang, S. J.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2012-10-15 |
GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers
|
Chang, Chung-Ying; Chang, Shoou-Jinn; Liu, C. H.; Li, Shuguang; Lin, T. K. |
| 國立成功大學 |
2009-11-15 |
GaN-Based LEDs With GaN mu-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads
|
Peng, Li-Chi; Lai, Wei-Chih; Chang, Ming-Nan; Shei, Shih-Chang; Sheu, Jinn-Kong |
| 臺大學術典藏 |
2018-09-10T08:14:34Z |
GaN-Based LEDs with High Emission Directionality Using Photonic Crystal Structures for Sidewall Reflection and Light Extraction
|
Yun-Wei Cheng;Szu-Chieh Wang;Jin Yi Tan;Yu-Hsuan Sun;Sheng-Chieh Yang;JianJang Huang; Yun-Wei Cheng; Szu-Chieh Wang; Jin Yi Tan; Yu-Hsuan Sun; Sheng-Chieh Yang; JianJang Huang; JIAN-JANG HUANG |
| 國立成功大學 |
2014-12 |
GaN-Based LEDs With Hot/Cold Factor Improved by the Electron Blocking Layer
|
Lam, Kin-Tak; Chang, Shoou-Jinn |
| 國立成功大學 |
2009-09 |
GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars
|
Lai, Wei-Chihh; Chen, P. H.; Chang, L. C.; Kuo, Cheng-Huang; Sheu, Jinn-Kong; Tun, Chun-Ju; Shei, Shih-Chang |
| 國立成功大學 |
2012 |
GaN-Based LEDs with Nano-Patterns by Contact-Transferred and Mask-Embedded Lithography and Cl-2/N-2 Plasma Etching
|
Zeng, X. F.; Shei, S. C.; Chang, S. J. |
| 國立成功大學 |
2012-05-15 |
GaN-Based LEDs With Omnidirectional Metal Underneath an Insulating SiO2 Layer
|
Lin, Nan-Ming; Shei, Shih-Chang; Chang, Shoou-Jinn; Zeng, Xu-Feng |
| 臺大學術典藏 |
2018-09-10T08:42:14Z |
GaN-based LEDs with Photonic Crystal Nanorod Sidewall Reflectors for Versatile Radiation Directionality Control
|
Yun-Wei Cheng;Szu-Chieh Wang;Yu-Feng Yin;JianJang Huang; Yun-Wei Cheng; Szu-Chieh Wang; Yu-Feng Yin; JianJang Huang; JIAN-JANG HUANG |
| 國立成功大學 |
2014-01 |
GaN-Based LEDs With Rough Surface and Selective KOH Etching
|
Chang, Shoou-Jinn; Chang, L. M.; Kuo, D. S.; Ko, T. K.; Hon, S. J.; Li, Shuguang |
| 國立成功大學 |
2012-02 |
GaN-Based LEDs with Sapphire Debris Removed by Phosphoric Etching
|
Chang, Shoou-Jinn; Kuo, D. S.; Lam, K. T.; Wen, K. H.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2012-09-24 |
GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition
|
Chen, Jiun-Ting; Lai, Wei-Chih; Chang, Yun-Chorng; Sheu, Jinn-Kong; Sen, Wen-Chih |
| 國立成功大學 |
2003-04 |
GaN-based light emitting diodes with si-doped In0.23Ga0.77N/GaN short period superlattice current spreading layer
|
Kuo, Cheng-Huang; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, Liang-Wen; Chen, Jone F.; Sheu, Jinn-Kong; Tsai, Ji-Ming |
| 國立成功大學 |
2016 |
GaN-Based Light Emitting Diodes with Two-Step Grown GaN Quantum Barriers
|
Lam, Kin-Tak; Lin, Wei-Heng; Chang, Shoou-Jinn |
| 國立成功大學 |
2012-02-15 |
GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer
|
Yen, Cheng-Hsiung; Lai, Wei-Chih; Yang, Ya-Yu; Wang, Chun-Kai; Ko, Tsun-Kai; Hon, Schang-Jing; Chang, Shoou-Jinn |
| 國立成功大學 |
2008-08 |
GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography
|
Su, Yan-Kuin; Chen, Jian-Jhong; Lin, Chuing-Liang; Chen, Shi-Ming; Li, Wen-Liang; Kao, Chien-Chih |
| 國立成功大學 |
2013-08-01 |
GaN-Based Light-Emitting Diodes on Electrochemically Etched n(-)-GaN Template
|
Lai, Wei-Chih; Yen, Cheng-Hsiung; Li, Jhen-Zih; Yang, Ya-Yu; Cheng, Hsyi-En; Chang, Shoou-Jinn; Li, Shuguang |
| 國立交通大學 |
2014-12-08T15:14:50Z |
GaN-based light-emitting diodes prepared on vicinal sapphire substrates
|
Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Cheng, Y. C.; Lin, W. J. |
| 國立成功大學 |
2007-02 |
GaN-based light-emitting diodes prepared on vicinal sapphire substrates
|
Lin, J. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lan, W. H.; Huang, K. C.; Chen, W. R.; Cheng, Y. C.; Lin, W. J. |
