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顯示項目 444711-444720 / 2351377 (共235138頁) << < 44467 44468 44469 44470 44471 44472 44473 44474 44475 44476 > >> 每頁顯示[10|25|50]項目
| 亞洲大學 |
2011-02 |
Gallium and Arsenic Recovery from Waste Gallium Arsenide by Wet Refined Methods
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Wei Ting Chen;Yung Chuan Chu;Jian Ming Wei;Lung Chang Tsai;Fang Chang Tsai;Chun Ping Lin;Chi Min Shu |
| 國立中山大學 |
1987 |
Gallium Arsenide Grown on Silicon From Trimethylgallium and Arsine by Metalorganic Chemical Vapor Deposition
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M.K. Lee;K.Y. Yu;Y.F. Lin;J.H. Chang;K.C. Hwang |
| 國立中山大學 |
1987 |
Gallium Arsenide Growth on Silicon From Triethylgallium and Arsine by Metalorganic Chemical Vapor Deposition
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M.K. Lee;K.Y. Yu;Y.F. Lin |
| 臺大學術典藏 |
2021-08-05T02:40:56Z |
Gallium Arsenide-Based Active Antennas for Optical Communication Photodetection with Robustness to Voltage and Temperature
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Lin C.-C;Chang B.-J;Chen S.-H;Lin K.-T;Chang S.-W;Chen W.-Y;Chen B.-Y;Liu M.-C;Chen H.-L.; Lin C.-C; Chang B.-J; Chen S.-H; Lin K.-T; Chang S.-W; Chen W.-Y; Chen B.-Y; Liu M.-C; Chen H.-L.; HSUEN-LI CHEN |
| 臺大學術典藏 |
2021-05-24T13:07:16Z |
Gallium Arsenide-Based Active Antennas for Optical Communication Photodetection with Robustness to Voltage and Temperature
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Lin, Ching Che; Chang, Bo Jyun; Chen, Szu Hung; Lin, Keng Te; Chang, Sih Wei; WEI-YU CHEN; Chen, Bo Yi; Liu, Ming Chen; HSUEN-LI CHEN |
| 國立臺灣大學 |
2007 |
Gallium In-Diffusion for the Fabrication of Lithium Niobate Optical Waveguides
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Huang, Wen-Hung; Wang, Way-Seen |
| 國立交通大學 |
2014-12-08T15:26:59Z |
Gallium K-edge EXAFS study of GaN : Mg films
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Pan, YC; Wang, SF; Lee, WH; Lin, WC; Shu, CK; Chiang, CI; Lin, CH; Chang, H; Lee, JF; Jang, LY; Lin, DS; Lee, MC; Chen, WH; Chen, WK |
| 國立交通大學 |
2014-12-08T15:44:18Z |
Gallium K-edge x-ray absorption study on Mg-doped GaN
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Pan, YC; Wang, SF; Lee, WH; Lee, MC; Chen, WK; Chen, WH; Jang, LY; Lee, JF; Chiang, CI; Chang, H; Wu, KT; Lin, DS |
| 臺北醫學大學 |
2014-01-03 |
Gallium Nitrate Regulates Annexin A2 Expression in SK Hep-1 Cells
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蔡孟達; Tsai, Meng-Ta |
| 國立交通大學 |
2020-05-05T00:02:24Z |
Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications
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Lee, P. H.; Lai, K. H.; Huang, T. J.; Chang, Edward Y.; Hsu, Heng-Tung; Lin, Y. C.; Chen, S. H. |
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