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顯示項目 446051-446060 / 2348609 (共234861頁)
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| 國立交通大學 |
2017-04-21T06:48:53Z |
Ge Channel MOSFETs Directly on Silicon
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Chen, Che Wei; Chung, Cheng-Ting; Chien, Chao Hsin |
| 國立交通大學 |
2014-12-08T15:30:25Z |
Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations
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Tang, Shih-Hsuan; Kuo, Chien-I; Trinh, Hai-Dang; Chang, Edward Yi; Nguyen, Hong-Quan; Nguyen, Chi-Lang; Luo, Guang-Li |
| 國立交通大學 |
2014-12-08T15:07:51Z |
Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs
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Luo, Guang-Li; Han, Zong-You; Chien, Chao-Hsin; Ko, Chih-Hsin; Wann, Clement H.; Lin, Hau-Yu; Shen, Yi-Ling; Chung, Cheng-Ting; Huang, Shih-Chiang; Cheng, Chao-Ching; Changb, Chun-Yen |
| 國立交通大學 |
2019-10-05T00:08:42Z |
Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O-3 Treatment
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Yeh, M. -S.; Luo, G. -L.; Hou, F. -J.; Sung, P. -J.; Wang, C. -J.; Su, C. -J.; Wu, C. -T.; Huang, Y. -C.; Hong, T. -C.; Chao, T. -S.; Chen, B. -Y.; Chen, K. -M.; Wu, Y. -C.; Izawa, M.; Miura, M.; Morimoto, M.; Ishimura, H.; Lee, Y. -J.; Wu, W. -F.; Yeh, W. -K. |
| 臺大學術典藏 |
2020-06-16T06:33:18Z |
Ge gate-all-around FETs on Si
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Liu, C.W.;Wong, I.-H.;Chen, Y.-T.;Tu, W.-H.;Huang, S.-H.;Hsu, S.-H.; Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric
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Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG |
| 國立臺灣大學 |
2012 |
Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric
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Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M. |
| 國立交通大學 |
2019-09-02T07:46:20Z |
Ge nanodot-mediated densification and crystallization of low-pressure chemical vapor deposited Si3N4 for advanced complementary metal-oxide-semiconductor photonics and electronics applications
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Peng, Kang-Ping; Huang, Tsung Lin; George, Tom; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2018-08-21T05:56:59Z |
Ge Nanowire FETs with HfZrOx Ferroelectric Gate Stack Exhibiting SS of Sub-60 mV/dec and Biasing Effects on Ferroelectric Reliability
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Su, C. -J.; Hong, T. -C.; Tsou, Y. -C.; Hou, F. -J.; Sung, P. -J.; Yeh, M. -S.; Wan, C. -C.; Kao, K. -H.; Tang, Y. -T.; Chiu, C. -H.; Wang, C. -J.; Chung, S. -T.; You, T. -Y.; Huang, Y. -C.; Wu, C. -T.; Lin, K. -L.; Luo, G. -L.; Huang, K. -P.; Lee, Y. -J.; Chao, T. -S.; Wu, W. -F.; Huang, G. -W.; Shieh, J. -M.; Yeh, W. -K.; Wang, Y. -H. |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate
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Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN; H. M. Wu,;Y. J. Yang,;H. H. Lin,; H. M. Wu, |
顯示項目 446051-446060 / 2348609 (共234861頁)
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