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顯示項目 458411-458435 / 2348439 (共93938頁)
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| 國立交通大學 |
2014-12-08T15:03:23Z |
GROWTH OF EPITAXIAL-LIKE (SR0.5BA0.5)NB2O6 FERROELECTRIC-FILMS
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LIN, WJ; TSENG, TY; LIN, SP; TU, SL; YANG, SJ; HARN, JJ; LIU, KS; LIN, IN |
| 國立東華大學 |
2001-12 |
Growth of faceted, ballas-like and nanocrystalline diamond films deposited in CH4/H2/Ar MPCVD
|
Yang T. S ; J. Y. Lai ; C. L. Cheng ; M. S. Wong |
| 臺大學術典藏 |
2018-09-10T07:03:16Z |
Growth of feature-controlled ZnO nanotube arrays by using patterned apertures with hydrothermal method
|
Chao, C.-H.; Huang, J.-S.; Lin, C.-F.; CHING-FUH LIN |
| 臺大學術典藏 |
2018-09-10T06:30:13Z |
Growth of ferroelectric crystal fibers for wavelength conversion
|
Lee, L.M.; Pei, S.C.; Tai, T.M.; Sun, D.H.; Kung, A.H.; Huang, S.L.; SHENG-LUNG HUANG |
| 大葉大學 |
2000-10 |
Growth of ferromagnetic Nd0.7Sr0.3MnO3 films with an off-axis sputtering configuration
|
Sung, H. H.;Su, B. T.;Yang, H. C.;Horng, H. E.;Wang, Li-Min |
| 國立臺灣大學 |
2000 |
Growth of ferromagnetic Nd0.7Sr0.3MnO3 films with an off-axis sputtering configuration
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Wang, L. M.; Sung, H. H.; Su, B. T.; Yang, H. C.; Horng, H. E. |
| 國立交通大學 |
2019-04-02T05:58:47Z |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
|
Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi |
| 元智大學 |
Jan-19 |
Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
|
李清庭; Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Chang, Edward Yi |
| 國立成功大學 |
2006-02-24 |
Growth of free-standing diamond films of hemispheric shells
|
Huang, Shr-Ming; Hong, Franklin Chau-Nan |
| 國立交通大學 |
2014-12-08T15:09:46Z |
Growth of free-standing GaN layer on Si(111) substrate
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Yang, Tsung Hsi; Ku, Jui Tai; Chang, Jet-Rung; Shen, Shih-Guo; Chen, Yi-Cheng; Wong, Yuen Yee; Chou, Wu Ching; Chen, Chien-Ying; Chang, Chun-Yen |
| 臺大學術典藏 |
1997 |
Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
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Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG |
| 國立成功大學 |
2011-09 |
Growth of Ga(2)O(3) Nanowires and the Fabrication of Solar-Blind Photodetector
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Weng, W. Y.; Hsueh, T. J.; Chang, Shoou-Jinn; Huang, G. J.; Hung, S. C. |
| 實踐大學 |
2011 |
Growth of Ga2O3 Nanowires and the Fabrication of Solar-Blind Photodetector
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Weng, W.Y.;Hsueh, T.J.;Chang, S.J.;Huang, G.J.;Hung, S.C. |
| 國立成功大學 |
2011-09 |
Growth of Ga2O3 nanowires and the fabrication of solar-blind photodetector
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Weng, W.-Y.;Hsueh, T.-J.;Chang, Shoou-Jinn;Huang, G.-J.;Humg, S.-C. |
| 國立中山大學 |
1998 |
Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique - key to first demonstration of GaAs MOSFETs
|
M. Hong;F. Ren;W.S. Hobson;J.M. Kuo;J. Kwo;J.P. Mannaerts;J.R. Lothian;M.A. Marcus;C.T. Liu;A.M. Sergent;T.S. Lay;Y.K. Chen |
| 國立交通大學 |
2014-12-16T06:16:17Z |
Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer
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Chang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen |
| 國立交通大學 |
2014-12-16T06:14:31Z |
Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer
|
Chang; Edward Y.; Luo; Guangli; Yang; Tsung Hsi; Chung Yen |
| 國立交通大學 |
2014-12-16T06:16:05Z |
Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layer
|
Chang, Edward Y.; Luo, Guangli; Yang, Tsung-Hsi; Chang, Chun-Yen |
| 中原大學 |
1993 |
Growth of GaAs on Si by employing AlAs/GaAs Double Amorphous Buffer
|
W.Y.Uen;T.Nishinaga |
| 國立成功大學 |
2008 |
Growth of GaAs oxide layer using photoelectrochemical method
|
Lee, Hsin-Ying |
| 國立成功大學 |
2012-01-15 |
Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer
|
Liu, Kuang-Wei; Young, Sheng-Joue; Chang, Shoou-Jinn; Hsueh, Tao-Hung; Hung, Hung; Chen, Shi-Xiang; Chen, Yue-Zhang |
| 中原大學 |
2006-11 |
Growth of Gamma-In2Se3 Films on Si Substrates by Metal-Organic Chemical Vapor Deposition with AlN Buffer Layer
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謝志傑;溫武義;李鎮宇;籃山明 ;Xie, Zhi-Jay;Uen, Wu-Yih;Li, Zhen-Yu;Lan, Shan-Ming |
| 國立交通大學 |
2014-12-08T15:43:58Z |
Growth of gamma-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures
|
Huang, Yen-Chin; Li, Zhen-Yu; Uen, Wu-Yih; Lan, Shan-Ming; Chang, K. J.; Xie, Zhi-Jay; Chang, J. Y.; Wang, Shing-Chung; Shen, Ji-Lin |
| 中原大學 |
2006-12 |
Growth of Gamma-In2Se3 Films on Si Substrates by Metal-Organic Chemical VaporDeposition with AlN Buffer Layer
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謝志傑;溫武義;李鎮宇;籃山明 ;Xie, Zhi-Jay;Uen, Wu-Yih;Li, Zhen-Yu;Lan, Shan-Ming |
| 國立成功大學 |
2007-11-26 |
Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method
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Lin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin; Huang, Wei-Ching; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; Lee, Ching-Ting |
顯示項目 458411-458435 / 2348439 (共93938頁)
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