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顯示項目 470051-470060 / 2348638 (共234864頁)
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| 國立交通大學 |
2014-12-08T15:18:51Z |
High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts
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Lee, YJ; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:32:25Z |
High voltage characteristics of junctionless poly-silicon thin film transistors
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Cheng, Ya-Chi; Wu, Yung-Chun; Chen, Hung-Bin; Han, Ming-Hung; Lu, Nan-Heng; Su, Jun-Ji; Chang, Chun-Yen |
| 大葉大學 |
2013-11-03 |
High Voltage Electrostatic Field (HVEF) Accelerates the Formation of Esters by Mixing Ethanol with Three Kinds of Organic Acids
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Lai, Cheng-Hong;Ko, Wen-Ching |
| 東海大學 |
2010-11-01 |
High voltage JFET with adjustable pinch-off voltage
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Hung, C.Y., Hu, C.M., Gong, J., Chan, W.C. |
| 臺大學術典藏 |
2018-09-10T07:25:34Z |
High voltage lateral 4H-SiC JFETs on a semi-insulating substrate
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KUNG-YEN LEE;Zhao, F.;Lee, K.-Y.;Liu, Y.-Z.;Lee, M.-C.;Wu, T.-L.;Kan, C.-L.;Huang, C.-F.; Huang, C.-F.; Kan, C.-L.; Wu, T.-L.; Lee, M.-C.; Liu, Y.-Z.; Lee, K.-Y.; Zhao, F.; KUNG-YEN LEE |
| 亞洲大學 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance
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楊紹明;Yang, Shao-Ming;*; Hema, EP;Hema, EP;Mri, Aryadeep;Mrinal, Aryadeep;許健;Sheu, Gene;陳柏安;Chen, PA |
| 亞洲大學 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance
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楊紹明;Yang, Shao-Ming;Hema, EP;Hema, EP;Mri, Aryadeep;Mrinal, Aryadeep;許健;Sheu, Gene;陳柏安;Chen, PA |
| 亞洲大學 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance
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Yang, 楊紹明 Shao-Ming |
| 亞洲大學 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance
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Chen, 楊紹明；Shao-Ming Yang ；Hema EP；Hema EP；Aryadeep Mri；Aryadeep Mrinal；許健；Gene Sheu；陳柏安；PA |
| 亞洲大學 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance
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Yang)*, 楊紹明(Shao-Ming;EP), Hema EP(Hema;Mrinal), Aryadeep Mri(Aryadeep;Sheu), 許健(Gene;Chen), 陳柏安(PA |
顯示項目 470051-470060 / 2348638 (共234864頁)
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