|
English
|
正體中文
|
简体中文
|
總筆數 :0
|
|
造訪人次 :
52729799
線上人數 :
560
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
|
|
|
顯示項目 470141-470150 / 2348674 (共234868頁)
<< < 47010 47011 47012 47013 47014 47015 47016 47017 47018 47019 > >>
每頁顯示[10|25|50]項目
| 國立彰化師範大學 |
2009-03 |
High-barrier Rectifying Contacts on Undoped ZnO Films with (NH4)2Sx Treatment Owing to Fermi-level Pinning
|
Lin, Yow-Jon; Chang, Shih-Sheng; Chang, Hsing-Cheng; Liu, Yang-Chun |
| 臺大學術典藏 |
2022-02-21T23:30:53Z |
High-Baud-Rate 32-QAM OFDM Single-arm and Dual-arm Encoded Silicon Mach-Zehnder Modulator
|
Kao, Shih Chun; Chung, Kuo Fang; Tsai, Cheng Ting; DING-WEI HUANG; Shih, Tien Tsong; GONG-RU LIN |
| 國立成功大學 |
2003 |
High-beta characteristics of first and second-stable spherical tokamaks in reconnection heating experiments of TS-3
|
�Ono,� Yasushi; Kimura, T.; Kawamori, E.; Murata, Y.; Miyazaki, S.; Ueda, Y.; Inomoto, M.; Balandin, A. L.; Katsurai, M. |
| 元智大學 |
Dec-17 |
High-Bit-Rate SOA-Based Optical Network Unit with Low Seeding Power That Uses Feedback Seeding Scheme
|
Mohammed Syuhaimi Ab-Rahman; Farhat shaltami; I-Shyan Hwang; Almabrok Swedan |
| 國立成功大學 |
1998-06 |
High-breakdown characteristics of the InP-based heterostructure field-effect transistor with In0.34Al0.66As0.85Sb0.15 Schottky layer
|
Su, Jan-Shing; Hsu, Wei-Chou; Lin, Wei; Jain, Shin-Yuh |
| 國立成功大學 |
2023 |
High-Breakdown P-Channel GaN MOS-HFETs With Al2O3-Dielectric and Drain Field-Plate
|
Ke, J.-H.;Lee, C.-S.;Li, Y.-X.;Hsu, W.-C. |
| 國立高雄師範大學 |
2002 |
High-Breakdown Voltage Heterostructure Fields-Effect Transistor for High Temperature Operations
|
Jung-Hui Tsai;Jung-Hui Tsai;Wen-Lung Chang;Kuo-Hui Yu;Kun-Wei Lin; 蔡榮輝 |
| 臺大學術典藏 |
2018-09-10T05:58:42Z |
High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE
|
Lin, Y.-S.; Lu, S.-S.; Lu, S.-S. |
| 國立臺灣大學 |
1996 |
High-breakdown-voltage Ga0.51In0.49P channel MESFET's grown by GSMBE
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
1995 |
High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy
|
Lu, S. S.; Huang, C. L.; Sun, T. P. |
顯示項目 470141-470150 / 2348674 (共234868頁)
<< < 47010 47011 47012 47013 47014 47015 47016 47017 47018 47019 > >>
每頁顯示[10|25|50]項目
|
