|
顯示項目 474236-474245 / 2346788 (共234679頁) << < 47419 47420 47421 47422 47423 47424 47425 47426 47427 47428 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2017-04-21T06:49:23Z |
Hole g-Factor Anisotropies in Individual InAs Quantum Rings
|
Kaji, R.; Tominaga, T.; Wu, Y. -N.; Wu, M. -F.; Cheng, S. -J.; Adachi, S. |
| 國立交通大學 |
2014-12-08T15:38:13Z |
Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
|
Wang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C. |
| 國立交通大學 |
2014-12-08T15:31:58Z |
Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin |
| 國立成功大學 |
2013-08 |
Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
|
Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
|
Lin, Bing-Cheng; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung |
| 國立交通大學 |
2014-12-08T15:29:53Z |
Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
|
Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung |
| 國立成功大學 |
2013-02-18 |
Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
|
Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung |
| 淡江大學 |
1997-12 |
Hole localization in Pr-doped RBa2Cu3O7−y systems
|
Kao, H.-C. I.; Yu, F. C.; Guan, W. |
| 國立臺灣海洋大學 |
2007-12-11 |
Hole Mobilities of 2,7- and 2,2'-Disubstituted 9,9'-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs
|
Yuan-Li Liao;Wen-Yi Hung;Tei-Hung Hou;Chi-Yen Lin;Ken-Tsung Wong |
| 臺大學術典藏 |
2018-09-10T06:28:01Z |
Hole mobilities of 2,7- And 2,2-disubstituted 9,9′-spirobifluorene- based triaryldiamines and their application as hole transport materials in OLEDs
|
Liao, Y.-L.; Hung, W.-Y.; Hou, T.-H.; Lin, C.-Y.; Wong, K.-T.; KEN-TSUNG WONG |
顯示項目 474236-474245 / 2346788 (共234679頁) << < 47419 47420 47421 47422 47423 47424 47425 47426 47427 47428 > >> 每頁顯示[10|25|50]項目
|