English  |  正體中文  |  简体中文  |  總筆數 :2854037  
造訪人次 :  45345768    線上人數 :  1551
教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
關於TAIR

瀏覽

消息

著作權

相關連結

跳至: [ 中文 ] [ 數字0-9 ] [ A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ]
請輸入前幾個字:   

顯示項目 474236-474245 / 2346788 (共234679頁)
<< < 47419 47420 47421 47422 47423 47424 47425 47426 47427 47428 > >>
每頁顯示[10|25|50]項目

機構 日期 題名 作者
國立交通大學 2017-04-21T06:49:23Z Hole g-Factor Anisotropies in Individual InAs Quantum Rings Kaji, R.; Tominaga, T.; Wu, Y. -N.; Wu, M. -F.; Cheng, S. -J.; Adachi, S.
國立交通大學 2014-12-08T15:38:13Z Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer Wang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.
國立交通大學 2014-12-08T15:31:58Z Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin
國立成功大學 2013-08 Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin
國立交通大學 2014-12-08T15:35:07Z Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer Lin, Bing-Cheng; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung
國立交通大學 2014-12-08T15:29:53Z Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung
國立成功大學 2013-02-18 Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric Tsai, Jyun-Yu; Chang, Ting-Chang; Lo, Wen-Hung; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Tai, Ya-Hsiang; Cheng, Osbert; Huang, Cheng-Tung
淡江大學 1997-12 Hole localization in Pr-doped RBa2Cu3O7−y systems Kao, H.-C. I.; Yu, F. C.; Guan, W.
國立臺灣海洋大學 2007-12-11 Hole Mobilities of 2,7- and 2,2'-Disubstituted 9,9'-Spirobifluorene-Based Triaryldiamines and Their Application as Hole Transport Materials in OLEDs Yuan-Li Liao;Wen-Yi Hung;Tei-Hung Hou;Chi-Yen Lin;Ken-Tsung Wong
臺大學術典藏 2018-09-10T06:28:01Z Hole mobilities of 2,7- And 2,2-disubstituted 9,9′-spirobifluorene- based triaryldiamines and their application as hole transport materials in OLEDs Liao, Y.-L.; Hung, W.-Y.; Hou, T.-H.; Lin, C.-Y.; Wong, K.-T.; KEN-TSUNG WONG

顯示項目 474236-474245 / 2346788 (共234679頁)
<< < 47419 47420 47421 47422 47423 47424 47425 47426 47427 47428 > >>
每頁顯示[10|25|50]項目