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機構 日期 題名 作者
國立成功大學 2005-08 Low threshold and high power output of a diode-pumped nonlinear mirror mode-locked Nd : GdVO4 laser Lin, Ja-Hon; Yang, Wen-Hsun; Hsieh, Wen-Feng; Lin, Kuei-Huei
臺北市立大學 2005 Low threshold and high power output of a diode-pumped nonlinear mirror mode-locked Nd:GdVO4 laser Ja-Hon Lin; Wen-Hsun Yang; Wen-Feng Hsieh; Kuei-Huei Lin; 林奎輝; 林家弘; 謝文峰
國立交通大學 2014-12-08T15:22:22Z Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure Lin, Gray; Su, Pei-Yin; Cheng, Hsu-Chieh
國立臺灣大學 2004-02 Low threshold current density 1.3 /spl mu/m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy Chang, F.Y.; Lee, J.D.; Lin, H.H.
國立成功大學 2007-03-26 Low threshold current density, highly strained InGaAs laser grown by MOC-ND Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Chiou, Chih-Hung
國立交通大學 2019-10-05T00:09:42Z Low threshold current photonic crystal surface emitting lasers with beam modulation capability Chen, Lih-Ren; Chiu, Han-Lun; Hong, Kuo-Bin; Lu, Tien-Chang
國立交通大學 2019-04-03T06:47:02Z Low threshold current, low resistance 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE Yu, Hsin-Chieh; Wang, Jyh-Shyang; Su, Yan-Kuin; Chang, Shoou-Jinn; Kuo, Hao-Chung; Lai, Fang-, I; Chang, Y. H.; Yang, Hong-Pin D.
國立成功大學 2016-12 Low threshold of a continuous-wave mode-locked and azimuthally polarized Nd:YVO4 laser with a semiconductor saturable absorber mirror Hong, Kun-Guei; Hung, Bi-Jin; Wei, Ming-Dar
東海大學 20090830-- Low threshold passively mode-locked Nd:GdVO4 lasers with a semiconductor saturable absorber output coupler Wu, H.-H., Hsu, M.-H., Hou, J.-H.
東海大學 20090830-- Low threshold passively mode-locked Nd:GdVO4 lasers with a semiconductor saturable absorber output coupler Wu, H.-H., Hsu, M.-H., Hou, J.-H.

顯示項目 557166-557175 / 2346260 (共234626頁)
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