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顯示項目 575211-575220 / 2348570 (共234857頁)
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| 國立交通大學 |
2014-12-16T06:15:45Z |
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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CHIOU, Bi Shiou; CHANG, Li Chun; HO, Chia Cheng; LEE, Dai Ying; SHEN, Yu Shu |
| 國立交通大學 |
2014-12-08T15:33:04Z |
Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots
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Liao, Yu-An; Chao, Yi-Kai; Chang, Shu-Wei; Chang, Wen-Hao; Chyi, Jen-Inn; Lin, Shih-Yen |
| 國立交通大學 |
2019-06-03T01:08:38Z |
Memory effect in nematic phase of liquid crystal doped with magnetic and non-magnetic nanoparticles
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Gdovinova, Veronika; Tomasovicova, Natalia; Jeng, Shie-Chan; Zakutanska, Katarina; Kula, Przemyslaw; Kopcansky, Peter |
| 國立聯合大學 |
2006 |
Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films
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Chia-Hsun Tu*, Yi-Sheng Lai, and Dim-Lee Kwong |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure
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Chang, TC; Liu, PT; Yan, ST; Yang, FM; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:27Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures
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Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:38:58Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)
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Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立中山大學 |
2004 |
Memory effect of oxide/SiC:O/Oxide sandwidthed structures
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T.C. Chang;S.T. Yan;F.M. Yang;P.T. Liu;S.M. Sze |
| 國立交通大學 |
2014-12-08T15:05:14Z |
Memory effect of RF sputtered ZrO2 thin films
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Lin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立東華大學 |
2007-12 |
Memory effect of RF sputtered ZrO2 thin films
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林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ;Wu, Chung-Yi ;Wu, Chen-Yu ;Tseng, Tseung-Yuen |
顯示項目 575211-575220 / 2348570 (共234857頁)
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