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| 東海大學 |
2011 |
Trap barricading and decorating by a well-armored sit-and-wait predator: Extra protection or prey attraction?
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Tseng, H.-J.a, Cheng, R.-C.b, Wu, S.-H.a, Blamires, S.J.b , Tso, I.-M.a |
| 國立成功大學 |
2001-03 |
Trap concentration dependence on the electrical properties of annealed ultrathin fluorinated silicon oxides
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Chang, Wai-Jyh; Houng, Mau-Phon; Wang, Yeong-Her |
| 元智大學 |
2002-09 |
Trap Impactor: A CFD Study
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張幼珍; W.H. Wang |
| 中華大學 |
2009 |
Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs
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吳建宏; rossiwu |
| 國立成功大學 |
2014-04 |
Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/f noise measurements
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Kao, Tsung-Hsien; Wu, San-Lein; Tsai, Kai-Shiang; Fang, Yean-Kuen; Lai, Chien-Ming; Hsu, Chia-Wei; Chen, Yi-Wen; Cheng, Osbert; Chang, Shoou-Jinn |
| 國立成功大學 |
2016-04-25 |
Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
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Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han |
| 國立交通大學 |
2017-04-21T06:55:22Z |
Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
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Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han |
| 國立臺灣科技大學 |
2013 |
Trap state spectroscopy of LiMyMn2-yO4 (M = Mn, Ni, Co): Guiding principles for electrochemical performance
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Ragavendran, K.R.;Lu, L.;Hwang, B.J.;Barner, K.;Veluchamy, A. |
| 國立臺灣科技大學 |
2015 |
Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN
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Ke, W.-C.;Lee, F.-W.;Yang, C.-Y.;Chen, W.-K.;Huang, Huang H.-P. |
| 國立交通大學 |
2015-12-02T02:59:39Z |
Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN
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Ke, Wen-Cheng; Lee, Fang-Wei; Yang, Cheng-Yi; Chen, Wei-Kuo; Huang, Hao-Ping |
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